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WINSOK WSD20L70DN33
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- WINSOK WSD20L70DN33
- Type
- WINSOK
- Minimum package
- 5000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- WINSOK
- Electronic Component
- WSD20L70DN33
- Electronic Component
- 1
- Package
- DFN-8(3x3)
- Electronic Component
- 1 P
- Type
- P
- Electronic Component
- MOSFET
- Electronic Component
- 0.122g
- Electronic Component
- 1
- Electronic Component
- BM0264549098
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 83W
- Electronic Component
- Electronic Component
- Electronic Component
- 5000
- Voltage(Vdss)
- 20V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
WSD20L70DN33 产品概述
WSD20L70DN33 是 WINSOK（微硕）推出的一款高性能沟槽 P 沟道 MOSFET，专为同步降压转换器及各种电源管理场景优化。凭借高单元密度与低导通电阻的设计，该器件在低压大电流应用中表现出色，同时符合 RoHS 及绿色产品要求，100% 通过全功能可靠性认证，适合量产级别应用。
一、主要规格亮点
- 类型：P沟道 MOSFET（沟槽工艺）
- 漏源电压 Vdss：20V
- 连续漏极电流 Id：70A
- 导通电阻 RDS(on)：6.7mΩ @ Vgs = 4.5V
- 阈值电压 Vgs(th)：约 0.6V（典型）
- 总栅电荷 Qg：70nC @ 4.5V
- 输入电容 Ciss：5.625nF；输出电容 Coss：927pF；反向传输电容 Crss：716pF
- 功耗 Pd：83W（封装与散热条件相关）
- 工作温度：-55℃ ~ +150℃
- 封装：DFN-8 (3×3)
二、性能与应用侧重点
WSD20L70DN33 在 20V 电压等级内提供优异的导通性能，6.7mΩ 的低 RDS(on) 结合 70A 的高电流承受能力，使其非常适合用作同步降压转换器的高侧开关、负载开关、电源旁路与反向保护等。P 沟道器件在高侧驱动上可简化驱动电路（对需要把栅极拉低以导通的场合尤为方便），适合对简化驱动方案有要求的系统。
三、设计注意事项
- 栅极驱动：Qg = 70nC 表明栅极驱动电流需求较大，高频切换时栅极驱动损耗显著，建议搭配有足够电流能力的驱动器或使用合适的栅阻以控制 dv/dt。
- 开关损耗与频率：较大的 Ciss/Crss 会增加开关损耗，若用于高开关频率 (>500kHz) 设计，应在损耗预算与散热设计上做权衡。
- 热管理：标称 Pd = 83W 需配合低热阻 PCB 设计（大铜箔散热、热过孔、地平面散热）以发挥器件性能，DFN-8 封装利于底部散热焊盘接地并热传导到 PCB。
- 布局建议：将 MOSFET 靠近电感与输入/输出电容，缩短电流回路，增大铜面积并使用热过孔；栅极走线短且避免与敏感信号平行。
四、可靠性与合规
WSD20L70DN33 符合 RoHS 要求并通过 100% 全功能可靠性测试，适合消费电子、电源模块与工业设备的量产应用。DFN-8 小型封装兼顾功率密度与 PCB 面积节省，利于高密度电路板设计。
五、典型应用场景
- 同步降压转换器高侧开关
- 移动设备与笔记本电源管理
- 车载辅助电源（需注意车规级要求）
- 负载开关与电源路径管理
- 电池保护与功率分配模块
总之，WSD20L70DN33 在 20V 级别提供了低 RDS(on)、高电流能力与可量产的可靠性特性，适合要求高功率密度与简化高侧驱动方案的电源设计。设计时应兼顾栅极驱动能力与散热布局，以发挥器件最佳性能。
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