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WINSOK WSD40P10DN56
Configuration
1 options
Configuration
Option 175588
Availability on request
Technical data
Product details
19
specifications
Core information
- Product name
- WINSOK WSD40P10DN56
- Type
- WINSOK
- Minimum package
- 5000 编带
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- WINSOK
- Electronic Component
- WSD40P10DN56
- Electronic Component
- 1
- Package
- DFN-8(4.9x5.8)
- Electronic Component
- 1 P
- Type
- P
- Electronic Component
- MOSFET
- Electronic Component
- 0.13g
- Electronic Component
- 1
- Electronic Component
- BM0228747125
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 54W
- Electronic Component
- Electronic Component
- Electronic Component
- 5000
- Voltage(Vdss)
- 100V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
WSD40P10DN56 产品概述
一、产品简介
WSD40P10DN56 是 WINSOK（微硕）推出的一款 P 沟道功率 MOSFET，额定漏源电压 100V，连续漏极电流 30A，耗散功率 54W。器件采用 DFN-8（4.9×5.8mm）小型封装，单只供应，适合对体积、散热和开关性能有综合要求的电源与功率管理场合。
二、主要电气参数
- 类型：P 沟道 MOSFET
- 漏源电压 Vdss：100V
- 连续漏极电流 Id：30A
- 导通电阻 RDS(on)：95mΩ @ Vgs = 10V
- 阈值电压 Vgs(th)：1.7V
- 栅极电荷 Qg：44nC @ 10V
- 输出电容 Coss：129pF
- 输入电容 Ciss：3.029nF @ 30V
- 反向传输电容 Crss：76pF @ 30V
- 功率耗散 Pd：54W
- 封装：DFN-8（4.9×5.8mm）
以上参数表征了器件在开通、关断及动态工作时的电气特性，便于在电路设计阶段进行驱动和热设计评估。
三、性能与设计注意点
- 导通性能：在 Vgs=10V 驱动下 RDS(on)=95mΩ，适合中等电流高侧开关或功率路径管理。阈值约 1.7V，说明器件在小幅栅压下即有导通，但要获得最低导通电阻应接近 -10V 的栅源电压（对 P 沟道而言，栅电压需比源电位低）。
- 开关特性：Qg=44nC 表明门极电荷处于中等水平，驱动器需提供相应电流以实现快速切换；Ciss、Coss、Crss 的数值对开关损耗与 EMI 设计有直接影响。
- 热管理：DFN-8 小型化封装利于 PCB 散热，但在大电流、高频切换场合需要配合大铜面积散热、热过孔和适配的封装焊盘布局以降低结-壳温升，确保 Pd 能力得以发挥。
四、典型应用场景
- 高边（high-side）开关与负载切换（电源管理、电池断开）
- 反向极性及功率路径保护
- 多相电源中用于功率分配与保护的开关元件
- 工业电源、通信设备及消费类电源管理模块
五、PCB 与驱动建议
- 为降低导通损耗和热阻，建议在 DFN-8 下方和引脚附近布置大面积铜箔并配合热过孔到背面散热层。
- 门极驱动需考虑 P 沟道的极性：若源端接正电源，栅极需拉低以产生负 Vgs（示例：期望 Vgs = -10V 时栅电压需比源低 10V）；驱动器应能承受器件工作电压并提供足够瞬时电流以快速充放 Qg。
- 推荐遵循常规的焊接与抗静电处理规范，DFN 封装在回流焊时需控制温度曲线以保证焊点可靠性。
WSD40P10DN56 以其 100V 耐压、30A 连续电流和紧凑封装，适用于需要高侧开关与功率路径控制的中高压应用场合。在设计中合理匹配驱动与散热布局，可充分发挥其电气与热性能。
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