WMSIC Electronic Components

XTX XT25F64FSSIGU

ModelXT25F64FSSIGU
PackageSOP-8
BrandXTX
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
XTX XT25F64FSSIGU
Type
XTX
Minimum package
90 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
XTX
Electronic Component
XT25F64FSSIGU
Electronic Component
1
Package
SOP-8
Electronic Component
NOR FLASH
Electronic Component
0.25g
Electronic Component
1
Electronic Component
BM0264982909
Electronic Component
64Mbit
Operating Temperature
40℃~+85℃
Operating Voltage
2.7V~3.6V
Current
0.3uA
Interface Type
SPI
Electronic Component
100000
Clock Frequency(fc)
133MHz

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

XT25F64FSSIGU 产品概述

一、产品简介

XT25F64FSSIGU 是 XTX(芯天下)推出的一款 64Mbit 串行闪存,面向嵌入式系统、消费电子、物联网设备等对容量、速度与低功耗有平衡需求的应用。器件支持标准 SPI 协议,同时兼容 Dual-SPI 与 Quad-SPI 模式,可在单/双/四线数据总线间切换以提升读写吞吐。封装为 SOP-8,便于 PCB 布局与量产加工。

二、主要规格参数

  • 存储容量:64Mbit(8M 字节)
  • 接口类型:标准 SPI,兼容 Dual/Quad SPI
  • 时钟频率 (fc):最高 133MHz
  • 工作电压:2.7V ~ 3.6V
  • 待机电流:典型 0.3 μA(超低功耗待机)
  • 页写入时间 (Tpp):典型 400 μs
  • 擦写寿命:100,000 次(典型)
  • 数据保留(TDR):20 年
  • 工作温度范围:-40 ℃ ~ +85 ℃
  • 封装:SOP-8
  • 品牌:XTX(芯天下)

三、引脚及接口说明

器件支持标准 SPI 信号,并在四线模式下将 I/O 复用以提升数据带宽。主要信号包括:

  • SCLK:串行时钟
  • CS#(片选):器件选通信号
  • SI / I/O0:主机到器件的数据输入(在双/四 SPI 中为 I/O0)
  • SO / I/O1:器件到主机的数据输出(在双/四 SPI 中为 I/O1)
  • I/O2 / WP#:写保护引脚(可作为 I/O2)
  • I/O3 / HOLD#:暂停/保持引脚(可作为 I/O3) 说明:常见 SOP-8 引脚分配(示例,仅供参考,最终请参照数据手册):
  1. CS# 2. SO/I/O1 3. WP#/I/O2 4. GND
  2. SI/I/O0 6. SCLK 7. HOLD#/I/O3 8. VCC

四、关键功能特性

  • 硬件写保护(WP#):外部电平可快速禁止写/擦指令,保护关键数据区域免受误写。
  • 绝对写保护(永久保护位):可将特定区域设为不可擦写,适合固件或不可变数据的长期保护。
  • 写使能锁存(WEL):写操作前必须设置写使能位,减少误擦写风险。
  • 软件写保护:通过软件指令设置保护寄存器,灵活控制扇区/块保护。
  • Dual/Quad SPI 支持:在读性能受限场景下,切换到双/四线模式可显著提高读取效率,缩短启动或大文件读时间。
  • 低功耗特性:典型待机电流 0.3 μA,适合电池供电与低功耗待机场景。

五、性能指标与可靠性

  • 高速通信:133MHz 时钟支持在兼容主控下实现更高数据带宽,利于启动加速与大块数据传输。
  • 擦写寿命:器件经设计支持 100,000 次擦写,适合需要频繁更新固件但仍有较高寿命要求的应用。
  • 页编程时间:单页编程(Tpp)典型值为 400 μs,结合批量写策略可优化整体写入吞吐。
  • 数据保持:20 年的数据保持能力,符合嵌入式长期存储的可靠性需求。
  • 宽温度范围:-40 ℃ ~ +85 ℃,覆盖工业级温区,可用于户外或温度变化较大的环境。

六、典型应用场景

  • MCU/MPU 引导存储(Boot ROM / 固件存储)
  • 嵌入式系统与物联网终端(参数与日志存储)
  • 消费电子(音视频应用、系统配置)
  • 工业设备(长期配置保存、故障日志)
  • 需要写保护与长期数据保存的安全存储场景

七、封装与设计注意事项

  • SOP-8 封装便于手工与自动化焊接,但在高速(高频)设计中应注意走线匹配与地电源完整性,以减少信号反射与 EMI。
  • WP# 与 HOLD# 引脚在作为 IO 使用时,应确保在需要写保护或暂停功能时正确连接与上拉/下拉,避免误触发。
  • 使用 Quad-SPI 时需确认主控器件支持该模式,并在 PCB 布线、阻抗控制上做好规划。
  • 在写/擦操作中注意遵循写使能流程(先 WREN,再执行写/擦),并等待 BUSY 完成或轮询状态寄存器。

八、快速选型建议

  • 若目标应用对启动速度和读吞吐有较高要求,建议在系统中使用 Dual/Quad SPI 模式以提速读操作。
  • 对电池供电与低功耗要求高的应用,可利用其 0.3 μA 的待机特性并合理使用休眠/深度休眠指令。
  • 对关键固件或不可变数据建议启用硬件/绝对写保护以确保数据安全。
  • 最终设计前,请下载并阅读 XTX 官方数据手册以获取详细电气特性、时序和典型应用电路。

如需更详细的时序图、寄存器定义或参考电路,我可以根据目标主控平台提供针对性的设计建议。

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