WMSIC Electronic Components

XTX XT25F02ESOIGU

ModelXT25F02ESOIGU
PackageSOP8 150mil
BrandXTX
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
XTX XT25F02ESOIGU
Type
XTX
Minimum package
100 管

Technical parameters

Electronic Component
Electronic Component
Electronic Component
XTX
Electronic Component
XT25F02ESOIGU
Electronic Component
1
Package
SOP8 150mil
Electronic Component
NOR FLASH
Electronic Component
0.145g
Electronic Component
1
Electronic Component
BM0264989570
Electronic Component
2Mbit
Operating Temperature
40℃~+85℃
Operating Voltage
2.7V~3.6V
Current
13uA
Interface Type
SPI
Electronic Component
100000
Clock Frequency(fc)
120MHz

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

XT25F02ESOIGU 产品概述

一、产品简介

XT25F02ESOIGU 是芯天下(XTX)推出的一款 2Mbit 串行闪存,支持标准 SPI 接口并兼容双 SPI(Dual I/O)模式。器件工作电压范围宽(2.7V~3.6V),适用于工业级温度(-40℃~+85℃)工作环境,针对对容量、读写性能与可靠性有中高要求的嵌入式系统设计。

二、主要规格与性能

  • 存储容量:2Mbit(256KByte)
  • 接口类型:标准 SPI,支持双 I/O(I/O0: SI,I/O1: SO)
  • 时钟频率(fc):最高 120MHz(单线模式);双 I/O 模式下数据吞吐可达 160Mbit/s
  • 工作电压:2.7V ~ 3.6V
  • 待机电流:13μA(典型)
  • 页写入时间(Tpp):1.3ms
  • 块擦除时间(tBE):500ms(按 64KB 块计)
  • 擦写寿命:100,000 次
  • 数据保持(TDR):20 年
  • 工作温度:-40℃~+85℃

三、功能特点

  • 写使能锁存(Write Enable Latch),对写操作提供可靠保护
  • 软件写保护(Software Write Protect),支持分区或全片保护策略
  • 支持双 I/O 提速读写,兼顾兼容性与高性能
  • 低功耗待机,适合电池供电设备
  • 快速页写与块擦除机制,适合需要频繁更新固件或数据的应用

四、电气与可靠性

XT25F02ESOIGU 在工业级电压与温度条件下表现稳定,13μA 的待机电流有助于降低系统静态功耗。100k 次擦写寿命与 20 年的数据保持能力,保证长期使用与重要数据保存。设计中请留意写入前必须执行写使能指令,并在写入/擦除操作期间遵守时序与电源完整性要求。

五、封装与引脚

器件提供 SOP8 150mil 封装(SOIC-8 相容),便于波峰或回流焊装配。常见引脚包括:CS、SCLK、SI(I/O0)、SO(I/O1)、VCC、GND 及其它控制/保留引脚,具体引脚排列参见器件数据手册。

六、典型应用场景

  • 嵌入式控制器固件存储与升级
  • 工业设备配置参数保存
  • 消费与便携式电子的用户数据保存
  • 网络设备、IoT 节点的引导与容错存储

七、设计注意事项

  • 在系统上电/掉电时保证 VCC、CS 等信号的正确时序,避免在电压不稳定阶段执行写操作
  • 使用双 I/O 模式时,确保主控支持相应的时序与速率
  • 对关键数据采用软件写保护或外部硬件保护以防止误写
  • 推荐在 PCB 布局时做好电源去耦与信号线阻抗匹配,减少高速 SPI 通信时的反射与干扰

XT25F02ESOIGU 以其稳定的工业级规格、双 I/O 高速选项与完善的写保护机制,适合需要可靠、低功耗串行非易失性存储的多种应用。欲获取详细时序图、命令集与引脚定义,请参考芯天下官方数据手册。

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