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YANGJIE HS1M
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
13
specifications
Core information
- Product name
- YANGJIE HS1M
- Type
- SMA(DO-214AC)
- Minimum package
- 5000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- YANGJIE
- Electronic Component
- HS1M
- Electronic Component
- 1
- Package
- SMA(DO-214AC)
- Electronic Component
- 0.129g
- Electronic Component
- 1
- Electronic Component
- BM0226547690
- Electronic Component
- Electronic Component
- Electronic Component
- 5000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
HS1M 快恢复/高效率二极管 — YANGJIE (扬杰)
一、产品简介
HS1M 为独立式（SMA 封装）快恢复、高效率二极管，适用于高压低电流整流与开关回流场合。器件设计兼顾低反向恢复时间与较高的脉冲冲击能力，可在高电压环境下提供可靠整流和浪涌保护。
二、主要特性
- 封装：SMA（独立式）
- 整流电流：1 A（平均）
- 直流反向耐压（Vr）：1000 V
- 正向压降（Vf）：1.7 V @ IF = 1.0 A
- 非重复峰值浪涌电流（Ifsm）：30 A
- 反向电流（Ir）：5 μA @ Vr = 1 kV
- 反向恢复时间（Trr）：75 ns
- 工作结温范围（Tj）：-55 ℃ ~ +150 ℃
三、电气与热性能要点
HS1M 在 1 A 工作点时具有相对较高的正向压降（约 1.7 V），适合高压整流而非低压高效能大电流场合。75 ns 的反向恢复时间表明该器件在开关频率较高的电源中能减少开关损耗与电磁干扰，但仍应根据应用频率评估开关损耗。Ifsm 30 A 表示短时冲击能力良好，适用于有开启浪涌的电路。5 μA 的反向漏电在 1 kV 电压下表现出较低的漏电特性，适合高压应用。
四、典型应用
- 高压整流电路（例如高压电源、偏压产生）
- 开关电源的次级或开关回流二极管（中低功率）
- 浪涌保护与钳位电路
- 工业与仪器仪表中的高压低电流整流
五、封装与使用建议
SMA 封装便于自动贴片与波峰焊或回流焊工艺。实际应用中建议：
- 在 PCB 设计时为二极管提供足够的铜箔散热面积，降低结温以提高可靠性；
- 对于连续工作或高环境温度场合，按厂商热阻与结温限制进行功率降额；
- 避免长期工作在靠近最大 Vr、Ifsm 条件下；必要时并联或选择更高额定电流器件；
- 在高 dV/dt 或高频开关场合，可配合缓冲网络（阻容或 RCD 钳位）以抑制电压尖峰与减少应力。
六、选型与注意事项
选择 HS1M 时需确认实际工作电流、开关频率与最大工作电压，评估正向压降带来的功耗与散热需求。若目标为低损耗大电流整流，应考虑额定电流更高或正向压降更低的型号；若对反向恢复时间有更严格要求，可比较 Trr 更短的肖特基或超快恢复系列。最后，遵循制造商数据手册中的最大极限参数与焊接工艺指南，以保证长期稳定运行。
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