WMSIC Electronic Components

YANGJIE YJL2312A

ModelYJL2312A
PackageSOT-23-3L
BrandYANGJIE
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Date code within 2 years

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
YANGJIE YJL2312A
Type
SOT-23-3L
Minimum package
3000

Technical parameters

Electronic Component
YANGJIE
Electronic Component
YJL2312A
Electronic Component
1
Package
SOT-23-3L
Electronic Component
1 N
Type
N
Electronic Component
MOSFET
Electronic Component
0.035g
Electronic Component
1
Electronic Component
BM0227685364
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
1.2W
Electronic Component
3000
Voltage(Vdss)
20V
Capacitor(Ciss)
900pF
Output Capacitor(Coss)
165pF

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

YJL2312A 产品概述

一、概述

YJL2312A 是扬杰(YANGJIE)推出的一款小封装、高性能 N 沟道 MOSFET,封装为 SOT-23-3L,额定漏源电压 20V,适用于低压开关和功率管理场合。器件针对便携式与板载电源方案优化,兼顾低导通损耗与良好的开关特性,适合作为低侧开关、负载开关与同步整流等应用。

二、主要参数

  • 类型:N 沟道 MOSFET(1 片)
  • Vdss(漏源耐压):20V
  • 连续漏极电流(Id):6.8A(峰值/脉冲规格需参考数据手册和热条件)
  • 导通电阻 Rds(on):39 mΩ @ Vgs=1.8V(测试电流 2.5A)
  • 耗散功率 Pd:1.2W(SOT-23 封装热限)
  • 栅极阈值 Vgs(th):450 mV
  • 总栅极电荷 Qg:9.2 nC @ 4.5V
  • 输入电容 Ciss:900 pF;输出电容 Coss:165 pF;反向传输电容 Crss:75 pF
  • 工作温度范围:-55 ℃ ~ +150 ℃
  • 封装:SOT-23-3L

三、性能亮点

  • 逻辑电平阈值:Vgs(th) ~0.45V,支持较低电平驱动;在 1.8V 门压时已测试出 39 mΩ 的低 Rds(on),便于与低压 MCU/电源直接耦合。
  • 开关特性平衡:Qg=9.2nC、Ciss=900pF,既保证快速开关又不会对简单驱动器造成过大驱动负担。举例:4.5V 驱动、100kHz 开关时栅极驱动功耗约为 Qg·Vdrive·fs ≈ 9.2e-9·4.5·1e5 ≈ 4.1 mW。
  • 适合低压高效率场合:20V 耐压覆盖常见电池与板级电源,低 Rds(on) 有利于降低导通损耗。

四、典型应用场景

  • DC-DC 降压/同步整流器低侧开关
  • 电池保护与功率路径切换(负载开关)
  • 便携设备开关、背光/LED 驱动(小功率)
  • 小型电机驱动、继电器/负载驱动开关
  • 板级短路保护与热管理配合使用

五、使用建议与注意事项

  • 功率与热限制:SOT-23 封装 Pd=1.2W,实际允许连续电流受板上散热影响很大。示例计算:在 2.5A 时导通损耗 P≈I^2·Rds(on)=2.5^2·0.039≈0.24W,远低于 Pd;但若达到 6.8A 则功耗≈1.8W,超过封装极限,应避免连续工况。
  • 驱动与开关布局:推荐短且宽的栅极走线,必要时串联 10–100Ω 门极电阻以抑制振铃;布线靠近驱动器以减少寄生电感。
  • 抗浪涌与感性负载:驱动感性负载时应加速保护(TVS、续流回路或能量吸收器)以防止 Vds 超限和击穿。
  • 开关速度与 EMI:Crss=75pF 会带来米勒效应,快速切换时注意栅极回路与布局以降低 EMI;若需要可适当增加栅阻或 RC 缓冲。

六、封装与热管理

SOT-23-3L 小封装便于 PCB 空间优化,但热阻较高。建议在 PCB 上使用较大面积铜箔、加宽电源回流层并在器件底部及周围增加散热铜,必要时多层板铺铜并采用过孔导热,以提升 θJA 并扩大连续工作能力。

七、对比与选型建议

YJL2312A 适合对体积、驱动电压与导通损耗有综合要求的低压方案;若系统频繁承载大电流或要求极低压降,应考虑更大封装或更低 Rds(on) 的器件。选型时需综合考虑最大脉冲电流、实际 PCB 热阻与目标工作温度。

总结:YJL2312A 在 SOT-23 小封装中提供了良好的逻辑电平驱动能力、适中的导通阻抗与可接受的开关性能,适合便携式与板载低压功率开关应用。购买与设计前建议参考完整数据手册以确认脉冲额定、热参数与测试条件。

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