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YANGJIE YJL3415KC
Configuration
1 options
Configuration
Date code within 2 years
Available for RFQ
Technical data
Product details
13
specifications
Core information
- Product name
- YANGJIE YJL3415KC
- Type
- SOT-23(TO-236)
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- YANGJIE
- Electronic Component
- YJL3415KC
- Electronic Component
- 1
- Package
- SOT-23(TO-236)
- Electronic Component
- 0.045g
- Electronic Component
- 1
- Electronic Component
- BM0262713925
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
YJL3415KC 产品概述
一、产品简介
YJL3415KC 是扬杰（YANGJIE）推出的一款 P 通道 MOSFET，封装为 SOT-23（TO-236）。器件适用于低电压电源高端开关、负载开关与电源路径控制等场景。主要规格：漏源电压 Vdss = 20V，连续漏极电流 Id = 5A，导通电阻 RDS(on) = 70mΩ（VGS = -2.5V 测试条件），耗散功率 Pd = 1W。
二、关键电气参数
- Vdss：20V，适合 5V/12V 低压系统的高端开关应用。
- Id：5A 连续电流能力（注意受封装及 PCB 散热限制）。
- RDS(on)：70mΩ @ VGS = -2.5V，表示在较低栅压下即可实现较低导通损耗，利于逻辑电平驱动。
- Vgs(th)：1.25V @ 250µA，为开启阈值参考值。
- Qg：13nC @ 10V，栅极电荷适中，影响驱动器选择与开关损耗。
- Ciss/Coss/Crss：540pF / 120pF / 100pF，影响开关速度与电磁干扰特性。
三、主要特性与优势
- 逻辑电平可驱：在较小负栅压下（如 -2.5V）即可获得良好导通电阻，便于与 MCU 或 PMIC 直接配合。
- 小封装、高集成度：SOT-23 体积小、适合移动设备与空间受限的电路板布局。
- 平衡的开关与导通性能：中等 Qg 与 Ciss 在开关频率与驱动功耗之间取得折中，适合多数开关场合。
四、典型应用场景
- 低压设备的高端负载开关（如 5V/3.3V 电源管理）。
- 电池供电系统的电源路径控制与反向保护。
- 便携式电子、消费类电子、单板电路的断电控制与电源切换。
五、布局与使用建议
- 散热：Pd 标称 1W，SOT-23 封装散热依赖 PCB 铜箔，建议加大热沉铜面积并采用短而粗的走线。
- 驱动：推荐保证栅极驱动能提供足够的负向电压以达到目标 RDS(on)，并考虑驱动器输出电流以快速充放栅电荷（Qg = 13nC）。
- 布线：将源极、漏极的电流回路尽量缩短，靠近电容做去耦，减少寄生电感。
- 保护：对感性负载需考虑体二极管的恢复损耗，可并联或选择合适的缓冲方案。
六、选型注意事项
尽管器件标称 5A，但在实际应用中应以 PCB 散热条件与环境温度决定可持续电流。若工作在较高开关频率或驱动电压不充分时，应关注开关损耗与热升。对于需要更低 RDS(on) 或更高 Vdss 的应用，可考虑尺寸更大或不同系列的 MOSFET。
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