WMSIC Electronic Components

YANGJIE BC817-16 BC817

ModelBC817-16
PackageSOT-23
BrandYANGJIE
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
YANGJIE BC817-16
Type
SOT-23
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
YANGJIE
Electronic Component
BC817-16
Electronic Component
1
Package
SOT-23
Electronic Component
0.033g
Electronic Component
1
Electronic Component
BM0230875396
Electronic Component
Electronic Component
Electronic Component
3000
models
BC817-16
version
1
prompt_id
15
package_id
42
image_model
gpt-image-2.5-flare
master_path
chengming/packages/42/cm-master-zh/e74d8c7408a72be1112592afb09f1ab1bc8c386755136c62d0329761e186f161.png

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

BC817-16 产品概述

一、产品简介

BC817-16 为 NPN 型小功率硅双极结晶体管,采用 SOT-23(TO-236)小型表贴封装,由扬杰(YANGJIE)品牌生产。器件针对通用开关与小信号放大场合优化,具备中等电流能力与较高的击穿电压,适合空间受限的消费类电子、工业控制与接口驱动电路。

二、主要参数

  • 晶体管类型:NPN
  • 最大集电极电流(Ic):500 mA
  • 集电极对发射极击穿电压(Vceo):45 V
  • 额定耗散功率(Pd):300 mW(SOT-23 封装)
  • 直流电流增益(hFE):100 @ Ic = 100 mA,VCE = 1 V
  • 特征频率(fT):100 MHz
  • 集电极截止电流(Icbo):100 nA
  • 集电极-发射极饱和电压(VCE(sat)):约 700 mV(典型值,具体工况见数据手册)
  • 工作温度范围:-55 ℃ ~ +150 ℃
  • 射基极击穿电压(Vebo):5 V
  • 封装:SOT-23(TO-236)
  • 品牌:YANGJIE(扬杰)

三、关键特性与优势

  1. 电压耐受力强:45 V 的 Vceo 允许在较高电压侧进行开关或放大,适用于 12 V 或更高电源的接口驱动应用。
  2. 中等大电流能力:最高 Ic 达到 500 mA,可驱动小型继电器、电磁阀、LED 阵列或作为低端功率开关使用(注意热耗散限制)。
  3. 较高电流放大率:在 100 mA 工作点处 hFE ≈ 100,简化前级驱动电路设计,减少基极驱动电流需求。
  4. 宽带特征频率:fT ≈ 100 MHz,使其在音频、宽带放大及中低频开关应用中表现良好。
  5. 低漏电流与抗温漂能力:Icbo 低至 100 nA,有利于高阻抗或待机电流敏感电路的稳定性。
  6. SOT-23 小封装:便于表面贴装生产,适合空间受限的电子设备。

四、典型应用场景

  • 影像、通信类小信号放大器与前置放大级
  • 微控制器 I/O 的电流放大与驱动(继电器、光耦、LED)
  • 电源管理开关、反向极性保护电路中做为低侧或高侧开关(注意 Vceo 及功耗限制)
  • 驱动小型马达或蜂鸣器(在额定 Ic、Pd 范围内)
  • 通用开关元件,用于电平转换、脉冲驱动及保护电路

五、设计与使用建议

  1. 热管理:SOT-23 封装的 Pd 为 300 mW,在大电流或高 VCE 条件下需注意结温升高。若工作点接近极限,应降低占空比、采用散热铜箔或将器件并联并分担热量。
  2. 饱和驱动:若用作开关并需低饱和压降,建议提供足够的基极驱动电流(常见经验值 Ib ≈ Ic/10),并通过限流电阻控制基极电流。
  3. 高频应用:fT = 100 MHz 提供了良好宽带响应,但在高频布局中应注意减小寄生电容与走线感抗,做好地线回流与阻抗匹配。
  4. 保护电路:由于 Vebo 为 5 V,基—发间反向电压不宜过高;在感性负载驱动时,应并联反向二极管或采用外部吸收元件抑制反冲。
  5. 基极偏置与噪声:在放大应用中合理偏置以获得稳定的静态工作点,避免温度导致的漂移影响。

六、封装与可靠性

SOT-23 小封装利于 SMT 自动化生产,但其热阻较大,散热能力有限。该器件工作温度范围宽(-55 ℃ ~ +150 ℃),适合严苛环境使用。为保证焊接可靠性,建议遵循厂商提供的回流焊曲线与湿度敏感度等级(MSL)要求,并在 PCB 设计时预留适度的铜面积以改善散热。

七、注意事项与测试建议

  • 在设计电路前,应参考完整数据手册中给出的典型特性曲线与极限条件,避免长期在额定极限点运行。
  • 进行可靠性验证时,应测试在目标工作温度与实际负载下的功耗、VCE(sat)、增益变化与结温上升。
  • 对于开关应用,测试开关速度、恢复时间以及在不同基极驱动下的饱和与解饱和特性。
  • 生产与维修过程中注意静电防护(ESD),以及按规定的封装回流规范进行焊接。

本概述基于器件的关键电气与机械参数给出应用级指导,具体电路设计与尺寸、焊接工艺等请以官方数据手册与样片测试结果为准。若需更详细的特性曲线或封装尺寸图,可进一步提供以便协助设计验证。

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