WMSIC Electronic Components

BLUE ROCKET BRCS035N03ZC

ModelBRCS035N03ZC
PackagePDFN-8(5x6)
BrandBLUE ROCKET
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
BLUE ROCKET BRCS035N03ZC
Type
BLUE ROCKET
Minimum package
5000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
BLUE ROCKET
Electronic Component
BRCS035N03ZC
Electronic Component
1
Package
PDFN-8(5x6)
Electronic Component
1 N
Type
N
Electronic Component
MOSFET
Electronic Component
0.174g
Electronic Component
1
Electronic Component
BM0230825180
Power Dissipation(Pd)
55W
Electronic Component
Electronic Component
Electronic Component
5000
Voltage(Vdss)
30V
Capacitor(Ciss)
2.2nF

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

BRCS035N03ZC 产品概述

BRCS035N03ZC 是 BLUE ROCKET 推出的 30V 级 N 沟道功率 MOSFET,采用 PDFN-8 (5×6) 封装,面向开关电源、功率分配和电机驱动等中低压大电流应用。器件在 4.5V 栅压下具有低导通电阻,结合较高的额定电流和适中的栅极电荷,能够在保持较低导通损耗的同时实现良好的开关性能。

一、主要参数一览

  • 类型:N 沟道功率 MOSFET
  • 漏源电压 Vdss:30 V
  • 导通电阻 RDS(on):6.5 mΩ @ Vgs = 4.5 V
  • 连续漏极电流 Id:95 A(典型条件下)
  • 耗散功率 Pd:55 W(器件额定)
  • 栅极阈值电压 Vgs(th):3.0 V @ Id = 250 μA
  • 栅极总电荷 Qg:32 nC @ Vgs = 10 V
  • 输入电容 Ciss:2.2 nF
  • 输出电容 Coss:145 pF
  • 反向传输电容 Crss:210 pF
  • 封装:PDFN-8 (5×6)
  • 品牌:BLUE ROCKET

二、性能特点与技术亮点

  • 低 RDS(on):6.5 mΩ@4.5V 在 5V 级门驱动系统中可获得较低的导通损耗,适合同步整流和负载开关场景。
  • 合理的栅极电荷(Qg=32 nC):在开关速度与驱动功率之间取得平衡,便于采用中等能力的门极驱动器实现快速开关同时避免驱动器过载。
  • 较高的连续电流能力(95 A):在有良好 PCB 散热条件下可承载大电流,适合 DC-DC 降压、负载开关与电机驱动。
  • 紧凑封装 PDFN-8 (5×6):利于高密度设计,同时需注意封装对热量通过 PCB 的传导要求。

三、典型应用场景

  • 同步整流降压(buck)转换器:作为高端或低端开关管,得益于低 RDS(on) 和适中 Qg,适用于 12V->5V、5V->3.3V 等转换。
  • 电源分配开关与负载开关:低导通阻抗可减少分配损耗与热耗。
  • 电机驱动与功率开关:适用于中低压直流电机控制。
  • 高速开关场合:当配合合适门驱动器时,可实现较快开关过渡,降低开关损耗。

四、驱动与开关设计建议

  • 驱动电压建议:器件在 4.5V 下已呈现低 RDS(on),若系统允许建议驱动至 10V 可进一步降低导通损耗并提升开关速度;若系统为 5V 门驱动,性能也已足够。
  • 门极驱动电流估算:Ig ≈ Qg / t_sw。举例,若希望在 20 ns 切换完栅极电压,所需驱动峰值电流约 32 nC / 20 ns = 1.6 A;在 10 ns 时约 3.2 A。因此选择门极驱动器时要考虑峰值能力与功耗。
  • 门极功耗:Pg_gate = Qg * Vdrive * f_sw。示例:在 Vdrive=10V,f_sw=500 kHz 时,Pg_gate ≈ 32 nC * 10 V * 500 kHz = 0.16 W(每个 MOSFET)。
  • 抑制振荡:建议在门极串联小阻(典型 2–10 Ω)以抑制振荡并控制 dV/dt,必要时并联 R-C 或使用阻尼网络。
  • 反向恢复与开关损耗:Crss(210 pF)和Coss(145 pF)会影响开关损耗与电压应力,设计时评估与二极管/同步整流器件配合的恢复特性。

五、散热与 PCB 布局建议

  • 热量散发:虽然器件额定耗散 55 W,但实际能承受的功率依赖 PCB 散热面积和铜厚。建议将器件的散热垫与多层大面积铜铺连通以降低热阻。
  • 低电感环路:在功率路径(Drain-Source)和门极回路中保持短、宽的走线,以减小寄生电感和环路电阻,有助于降低 EMI 与开关尖峰。
  • 地与散热:将源极和散热焊盘与主地层良好连接,必要时通过多颗过孔导通大电流回流。
  • 测试与保护:设计时预留温度检测点与过流/短路保护,防止长时间过载导致热失效。

六、注意事项与选型建议

  • Vgs(th) 为 3.0 V(@250 μA),表明器件并非超低阈值,虽然在 4.5–5 V 门驱动下表现良好,但在 3.3 V 门驱动系统中可能无法完全导通,需评估 RDS(on) 在低栅压下的变化。
  • Id(95 A)通常在理想实验条件下给出,实际系统中应基于 PCB 散热和环境温度计算允许的连续电流与结温上限(SOA)。
  • 若系统对开关损耗或开关速度有极高要求,可在选型时关注器件在 10 V 下的 RDS(on) 与开关能量曲线,或考虑更低 RDS(on) /更低 Qg 的替代型号。

七、总结

BRCS035N03ZC 是一款面向 30V 级、需要兼顾低导通损耗与中高速开关性能的 N 沟道 MOSFET,适用于同步整流、功率分配、负载开关与电机驱动等场景。设计时应合理选择门驱动电压与驱动器峰值能力,并通过良好的 PCB 散热与版图布局来发挥器件的高电流与低损耗优势。若有更具体的系统参数(开关频率、工作电流、工作温度等),可进一步给出更精准的热设计与驱动配置建议。

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