WMSIC Electronic Components

BLUE ROCKET MMBT4403

ModelMMBT4403
PackageSOT-23
BrandBLUE ROCKET
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
BLUE ROCKET MMBT4403
Type
BLUE ROCKET
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
BLUE ROCKET
Electronic Component
MMBT4403
Electronic Component
1
Package
SOT-23
Electronic Component
1 PNP
Electronic Component
Transistor(BJT)
Electronic Component
0.03g
Electronic Component
1
Electronic Component
BM0231133047
Transistor Type
PNP
Frequency(f T)
200MHz
Power Dissipation(Pd)
350mW
Electronic Component
Electronic Component
Electronic Component
3000
Collector Current(Ic)
600mA

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

MMBT4403 产品概述

一、产品简介

MMBT4403(品牌:BLUE ROCKET)为SOT-23封装的PNP小信号晶体管,面向开关与高频放大场合。器件具备较高的直流电流增益(hFE ≈ 300)与较高的特征频率(fT ≈ 200MHz),适合运用于小功率射频前端、驱动级和通用开关放大应用。器件单颗数量:1。

二、主要电气参数(典型/最大值)

  • 晶体管类型:PNP
  • 集电极电流 Ic:600mA(峰值/连续使用需结合热耗散考虑)
  • 集射极击穿电压 Vceo:40V
  • 耗散功率 Pd:350mW(封装热极限)
  • 直流电流增益 hFE:约300(视偏置与Ic而变化)
  • 特征频率 fT:约200MHz(适合高频小信号放大)
  • 集电极截止电流 Icbo:50nA(低漏电)
  • 集射极饱和电压 VCE(sat):约750mV(典型条件下)
  • 射基极击穿电压 Vebo:5V

三、典型应用场景

  • 小信号高频放大:fT≈200MHz,可用于VHF/UHF前级或缓冲放大。
  • 通用开关与驱动:用于逻辑电平转换、晶体管阵列驱动及负载切换(注意功耗限制)。
  • 电平移位、互补放大器:与NPN小信号器件配合用于推挽或补偿电路。
  • 便携设备与消费电子:适用于体积受限且需要SOT-23封装的小功率电路。

四、封装与引脚、安装

  • 封装:SOT-23,三引脚。具体引脚布局(引脚编号与功能)请以厂商封装图为准。
  • 焊接与回流:遵守厂商推荐回流温度曲线,避免过热导致参数漂移或封装损伤。
  • PCB布局:靠近热敏元件留有散热通道;若长期较大电流工作,需考虑铜箔面积以增加散热。

五、使用注意与建议

  • 功耗与热管理:Pd仅350mW,若在高Ic条件下工作(接近600mA),需保证极低的VCE或采取脉冲工作以避免过热。
  • 饱和与驱动:VCE(sat)约750mV,若要求低饱和压,应增大基极驱动电流(一般按Ic/10估算基极电流),同时检查基-射击穿(Vebo=5V)限制。
  • 极限电压与漏电:Vceo=40V,应用中应留足余量;Icbo低(≈50nA),适合高阻抗偏置场合。
  • 高频性能:在接近fT工作时需注意寄生电容与布局,采用短走线与适当阻抗匹配。

六、替代与选型提示

可参考同类PNP小信号器件(如MMBT3906、2N3906等)做初步替代,但在替换前必须比对Vceo、Ic、Pd、hFE、封装及引脚定义,确保在热与频率条件下满足设计需求。

如需更详细的引脚图、典型特性曲线与封装热阻参数,请参考BLUE ROCKET官方规格书或索取样片测试数据。

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