WMSIC Electronic Components

BLUE ROCKET MPSA94

ModelMPSA94
PackageTO-92-3
BrandBLUE ROCKET
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
BLUE ROCKET MPSA94
Type
BLUE ROCKET
Minimum package
3000 盒

Technical parameters

Electronic Component
Electronic Component
Electronic Component
BLUE ROCKET
Electronic Component
MPSA94
Electronic Component
1
Package
TO-92-3
Electronic Component
1 PNP
Electronic Component
Transistor(BJT)
Electronic Component
0.2g
Electronic Component
1
Electronic Component
BM0231133046
Transistor Type
PNP
Frequency(f T)
50MHz
Power Dissipation(Pd)
625mW
Electronic Component
Electronic Component
Electronic Component
3000
Collector Current(Ic)
300mA

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

MPSA94 产品概述

一、产品简介

MPSA94(BLUE ROCKET,TO-92-3)是一款高压 PNP 小信号晶体管,面向需要高耐压与中等电流能力的电子设计场景。该器件未分类(描述中标注“未分类”),以其高集电极-发射极击穿电压和适中的电流增益,在高压开关、保护电路与高压放大模块中具有良好适配性。出厂数量为单只(1个PNP)。

二、主要电气参数

  • 晶体管类型:PNP
  • 集电极电流 Ic:300 mA(最大)
  • 集电极-发射极击穿电压 Vceo:400 V
  • 耗散功率 Pd:625 mW(TO-92封装)
  • 直流电流增益 hFE:80(在 Ic=10 mA、VCE=10 V 条件下)
  • 特征频率 fT:50 MHz
  • 集电极截止电流 Icbo:100 nA
  • 集电极-发射极饱和电压 VCE(sat):约200 mV(标注条件 10 mA、1.0 mA)
  • 发射-基极击穿电压 Vebo:5 V

三、特性与性能解读

MPSA94 的最大亮点是高达 400 V 的 Vceo,使其可在数百伏工况下工作,适合高压测控与开关场合。hFE≈80 在 10 mA 工作点提供良好的驱动放大能力;fT=50 MHz 表明该器件在中高频段仍保持合适增益,适配较快的开关或放大需求。需要注意 Vebo 仅 5 V,基极与发射极间耐压较低,电路设计中应严格限制基极反向电压以防击穿。

四、典型应用场景

  • 高压开关与高侧驱动(高压小电流开关)
  • 高压信号级的放大器与缓冲器
  • 过压/反接保护电路中的控制元件
  • 开关电源中作为高压小信号控制晶体管(非主功率开关)

五、封装与热管理

TO-92-3 小塑封提供方便的手工焊接与通用 PCB 布局,但耗散功率仅 625 mW,实际可允许的集电极电流受热限制显著:在连续工作时应限制 Ic 远低于 300 mA,或采用间歇脉冲驱动并保证散热与环境温度合适。

六、选型与使用建议

  • 基极限流:推荐使用合适的基极电阻,避免基极承受超过 Vebo 的反向电压。
  • 电流与功耗匹配:若需接近 100 mA 以上电流,务必评估结温及封装散热,必要时改用更大功率封装或并联(并联需注意共享问题)。
  • 测试要点:测量 Icbo(漏电)与 hFE(在 10 mA 条件)以确认批次一致性,检查 VCE(sat) 在目标电流下的表现。

七、注意事项

避免基-发反向电压超过 5 V;高压测试时注意缓慢升压并限制泄漏电流,防止热失控。TO-92 封装对机械应力与热循环敏感,建议在焊接与组装时采取合适工艺以保证可靠性。

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