WMSIC Electronic Components

BLUE ROCKET 2SD669AD-C

Model2SD669AD-C
PackageTO-252-2
BrandBLUE ROCKET
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
BLUE ROCKET 2SD669AD-C
Type
BLUE ROCKET
Minimum package
2500 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
BLUE ROCKET
Electronic Component
2SD669AD-C
Electronic Component
1
Package
TO-252-2
Electronic Component
1 NPN
Electronic Component
Transistor(BJT)
Electronic Component
0.448g
Electronic Component
1
Electronic Component
BM0225825297
Transistor Type
NPN
Frequency(f T)
140MHz
Power Dissipation(Pd)
10W
Electronic Component
Electronic Component
Electronic Component
2500
Collector Current(Ic)
1.5A

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

2SD669AD-C 产品概述

一、概述

2SD669AD-C 为 BLUE ROCKET 品牌的一款中功率 NPN 晶体管,设计用于开关与线性放大场合。器件承受较高集电极—发射极电压(Vceo=160V)和较大集电极电流(Ic最高可达1.5A),具备较宽的应用范围,适合高压开关、驱动级与一般功率放大电路。

二、主要参数

  • 晶体管类型:NPN
  • 集电极电流 Ic:1.5 A(最大额定)
  • 集电极—发射极击穿电压 Vceo:160 V
  • 直流电流增益 hFE:约 100(在 150 mA、Vce=5V 条件下);资料亦示例有 320 的条件值,实际取决于测试点
  • 集电极截止电流 Icbo:10 μA
  • 集射极击穿电压 Vebo:5 V
  • 集电极电流特征频率 fT:140 MHz
  • 集电极饱和电压 VCE(sat):1 V(条件:Ic=500 mA、Ib=50 mA)
  • 功耗 Pd:封装与散热条件相关,资料中有 1 W 与 10 W 两种标注,请按实际封装与 PCB 散热处理采用降额设计
  • 封装:TO-252(常见为 TO-252-2/TO-252-3 变体,请以实物标注为准)

三、主要特性与优势

  • 高耐压:160 V 的 Vceo 使其适用于高压供电场合与感性负载驱动;
  • 中等电流能力:1.5 A 的集电极电流满足多数功率驱动与放大需求;
  • 频率性能良好:fT≈140 MHz,适合中高频放大器与快速开关;
  • 低漏电与稳定性:Icbo 低(10 μA),提高待机与静态性能。

四、封装与引脚说明

TO-252 系列封装便于表面贴装,利于自动贴装生产。不同厂商封装脚位可能略有差别,常见引脚排列为:1=门级/基极,2=集电极,3=发射极(或金属底板为集电极)。使用前请核对具体器件数据手册与 PCB 脚位图。

五、典型应用场景

  • 开关电源次级或辅助电路的高压开关元件;
  • 电机驱动与继电器驱动电路;
  • 中小功率音频放大器的驱动级或输出级;
  • 工业控制、仪器仪表中的开关与放大电路。

六、使用与热设计建议

  • 散热注意:TO-252 为表贴封装,Pd 受 PCB 铜箔与散热层影响大。高功率工作时应将集电极金属面通过充足铜箔或散热垫散热,并采用降额(例如以额定功耗的 50–70% 作为持续运行上限);
  • 饱和导通驱动:作为开关使用时建议给与足够基极驱动电流,通常在饱和时按强制 β(10–20)估算基极电流,以降低 VCE(sat);
  • 限流与保护:高压与感性负载时建议并联续流二极管或 RC 吸收,避免峰值电压导致击穿;
  • 静电防护与焊接:遵循常规静电防护措施,焊接温度与时长按封装说明书要求控制。

七、结论

2SD669AD-C 以其高耐压和良好的频率特性,是一款适合高压、中等电流应用的通用 NPN 功率晶体管。实际选型时应以器件的具体封装标注与详细数据手册为准,针对功耗和热阻做充分的热设计与电路保护,以保证长期可靠运行。若需更精确的热阻、SOA 曲线或封装图纸,请提供样片或型号完整数据手册以便进一步评估。

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