WMSIC Electronic Components

BLUE ROCKET IRF740

ModelIRF740
PackageTO-220
BrandBLUE ROCKET
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Electronic Component

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
BLUE ROCKET IRF740
Type
BLUE ROCKET
Minimum package
50 管

Technical parameters

Electronic Component
Electronic Component
Electronic Component
BLUE ROCKET
Electronic Component
IRF740
Electronic Component
1
Package
TO-220
Electronic Component
1 N
Type
N
Electronic Component
MOSFET
Electronic Component
2.74g
Electronic Component
1
Electronic Component
BM0225825298
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
134W
Electronic Component
Electronic Component
Electronic Component
50
Voltage(Vdss)
400V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

IRF740(BLUE ROCKET)产品概述

一、产品简介

BLUE ROCKET 牌 IRF740 为单只 N 沟道绝缘栅场效应管(MOSFET),采用常见的 TO-220 封装,适用于中高压开关与放大场合。器件耐压达 400V,额定连续漏极电流 10A,耗散功率高达 134W(在良好散热条件下),兼顾耐压与功率处理能力,适合开关电源、逆变器、灯控与电机驱动等应用。

二、主要技术参数

  • 类型:N 沟道 MOSFET
  • 封装:TO-220(单片,数量:1)
  • 漏-源耐压 Vdss:400V
  • 连续漏极电流 Id:10A
  • 导通电阻 RDS(on):550 mΩ @ Vgs = 10V
  • 阈值电压 Vgs(th):4.0V @ Id = 250 μA
  • 耗散功率 Pd:134W(需良好散热)
  • 栅-源极限电压 VgSS:±30V
  • 输入电容 Ciss:2.04 nF
  • 输出电容 Coss:195 pF
  • 反向传输电容 Crss(Crss/Crss):20 pF
  • 品牌:BLUE ROCKET

三、特性与优势

  • 耐高压:400V 的 Vdss 能应对大多数中高压电源与逆变场合的电压应力。
  • 容量与切换特性均衡:Ciss 与 Coss 提供合理的驱动与开关性能,便于在中频率下取得平衡的开关损耗与速度。
  • TO-220 封装:便于手工焊接、安装散热片和更换维护,适合实验和中小批量应用。
  • 工业温度范围:工作温度覆盖 -55℃ 到 +150℃,满足工业级环境要求。

四、典型应用场景

  • 开关电源(SMPS)高压侧开关
  • 单相/三相逆变器与变频器的中高压级
  • 功率放大器和电子镇流器
  • 电机驱动、灯控与稳压模块
  • 通用功率开关与保护电路

五、封装与热管理建议

TO-220 封装便于安装大尺寸散热片。器件标称 Pd 为 134W,但该值依赖于良好的热阻和环境条件。建议:

  • 在高功率工作点使用合适散热片并填充导热硅脂;
  • 设计时参考器件的热阻和实际结-壳、壳-散热片热阻,确保结温在安全范围内;
  • 在频繁开关或高频应用中,关注开关损耗与热循环,必要时并联或采用更低 RDS(on) 的器件。

六、使用建议与注意事项

  • 栅极电压不得超过 ±30V,避免静电或过压损坏;
  • 实际导通电阻受结温影响,升温会增加 RDS(on),需留足裕量;
  • 注意 Coss/Crss 带来的缓冲与回灌影响,在高 dv/dt 场景下可能产生误触发或需加 RC 阻尼;
  • 工作电压应低于 Vdss,并考虑系统中的过压瞬态(建议配合 TVS 或钳位保护);
  • 在并联使用时应做好源端电流均流和栅极驱动一致性设计。

如需完整的电气特性曲线(漏极特性、开关波形、热阻数据)或封装机械图纸,我可帮您获取或整理成便于设计参考的资料。

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