WMSIC Electronic Components

CJ FMMT495

ModelFMMT495
PackageSOT-23
BrandCJ
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
CJ FMMT495
Type
CJ
Minimum package
3000 编带

Technical parameters

Electronic Component
Electronic Component
Electronic Component
CJ
Electronic Component
FMMT495
Electronic Component
1
Package
SOT-23
Electronic Component
1 NPN
Electronic Component
Transistor(BJT)
Electronic Component
0.032g
Electronic Component
1
Electronic Component
BM0228789700
Operating Temperature
55℃~+150℃
Transistor Type
NPN
Frequency(f T)
100MHz
Power Dissipation(Pd)
250mW
Electronic Component
Electronic Component
Electronic Component
3000

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

FMMT495 三极管产品概述

一、产品简介

FMMT495 是江苏长电(CJ/长晶)生产的一款 NPN 小信号/小功率晶体管,采用 SOT-23 封装,面向通用放大与开关应用。器件在高电压耐受性与较高电流能力之间取得均衡,适用于需要 150V 级别耐压同时又要求较快响应的电路。

二、主要电气参数

  • 晶体管类型:NPN(双极性晶体管,BJT)
  • 直流电流增益 hFE:100(典型值,测量条件 1 mA、VCE=10 V)
  • 集电极电流 Ic:最大 1 A(瞬态或在适当散热条件下)
  • 集射极击穿电压 VCEo:150 V(最大)
  • 射基极击穿电压 VEbo:5 V(最大)
  • 集电极截止电流 Icbo:100 nA(典型/最大值,低泄漏特性)
  • 特征频率 fT:100 MHz(典型,适合 VHF 带宽的放大)
  • 耗散功率 Pd:250 mW(封装散热限制,参考环境与 PCB 散热)
  • 集射极饱和电压 VCE(sat):约 300 mV(典型,具体测试条件见厂方数据表,涉及不同 Ic/Ib 条件)

三、性能特点

  • 高耐压(VCEo=150 V),适用于高电压信号路径或电源抑制场合。
  • 低漏电流(Icbo≈100 nA),利于低功耗或高阻抗输入电路的稳定性。
  • 中等到高增益(hFE≈100@1 mA)使其在小信号放大时具有良好线性和增益裕量。
  • fT≈100 MHz,支持小信号放大与较快开关速度,适用于音频以上及射频前端的部分应用。
  • SOT-23 小封装,便于表面贴装、体积受限电路板布局。

四、典型应用

  • 低/中电压小信号放大器(前置放大、音频差分放大等)。
  • 通用开关:驱动小继电器、指示 LED、逻辑电平转换(在额定电流与散热允许范围内)。
  • 电源管理中的基准/保护电路、高压断路/限流辅助器件。
  • 高频率要求不高但需一定带宽的通信电路、混合信号前端。

五、使用与热管理建议

  • Pd=250 mW 为封装在标准环境下的最大耗散,实际应用应考虑散热降额(随环境温度升高需线性降额至零)。建议在 PCB 上设计足够的铜箔散热和热过孔以提高散热能力。
  • 若在靠近最大 Ic(接近 1 A)工作,必须确保短脉冲或良好散热环境;长期连续大电流时应选择更大功耗封装或并联设计。
  • 高频应用时注意寄生电容与走线阻抗,合理布局可发挥 fT 的优势。
  • 由于 VEbo=5 V,应避免基极对发射极施加过高逆向电压以防击穿。

六、封装与订货信息

  • 封装形式:SOT-23(表面贴装)
  • 品牌/制造商:CJ(江苏长电/长晶)
  • 型号:FMMT495
  • 订购时请参阅厂方完整规格书以确认引脚定义与测试条件,SOT-23 引脚排列可能因厂家版本不同。

七、注意事项

  • 本概述基于常见典型参数与用户提供的核心规格,具体电气特性(如 VCE(sat) 在不同 Ic/Ib 条件下、热阻 RθJA、极限结温等)请以 CJ 官方数据手册为准并在设计前进行仿真与样片测试。
  • 在高压或高频敏感电路中使用时,建议评估开关瞬态、击穿余量与电磁兼容影响,必要时采取抑制与滤波措施。

如需基于 FMMT495 的偏置电路例子、开关/放大器参考设计,或与竞品参数对比,我可以提供更详细的设计建议与计算参考。

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