WMSIC Electronic Components

CJ ESDTU5V0A1

ModelESDTU5V0A1
PackageDFNWB1006-2L
BrandCJ
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Date code within 2 years

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
CJ ESDTU5V0A1
Type
CJ
Minimum package
10000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
CJ
Electronic Component
ESDTU5V0A1
Electronic Component
1
Package
DFNWB1006-2L
Electronic Component
Electronic Component
Type
ESD
Electronic Component
ESD and Surge Protection (TVS / ESD)
Electronic Component
0.004g
Electronic Component
1
Cj- Capacitor
0.35pF
Electronic Component
BM0227330802
Voltage
12V
Electronic Component
IEC 61000-4-2
Current(Ir)
100nA
Voltage(VBR)
6V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

ESDTU5V0A1 产品概述

一、产品简介

ESDTU5V0A1 是 CJ(江苏长电/长晶)推出的一款双向瞬态抑制二极管(TVS),封装为 DFNWB1006-2L,专为保护敏感电子接口免受静电放电和瞬态过压冲击而设计。该器件按照 IEC 61000-4-2 标准提供 ESD 防护,适用于空间受限且对信号完整性有较高要求的应用场景。

主要基础参数:

  • 极性:双向
  • 反向截止电压 Vrwm:5 V
  • 击穿电压:6 V
  • 钳位电压:12 V
  • 峰值脉冲电流 Ipp:4 A
  • 峰值脉冲功率 Ppp:45 W
  • 反向电流 Ir:100 nA
  • 结电容 Cj:0.35 pF

二、电气性能亮点

  • 双向结构:对双向信号(例如差分数据线)提供对称保护,无需区分极性;
  • 低结电容(0.35 pF):对高速信号线侵入性小,尽量减少信号失真与带宽损耗,适合对数据速率敏感的接口;
  • 低漏电(100 nA):在待机或低功耗系统中对电源和信号线的影响极小;
  • 良好浪涌承受能力:Ipp=4 A、Ppp=45 W,可有效吸收短时的 ESD 脉冲;
  • 钳位性能:典型钳位电压 12 V,在发生瞬态时能迅速将电压钳制到受控范围内,保护下游器件免受过压损伤。

三、典型应用场景

  • USB、差分高速数据口及其它 5 V 兼容接口的 ESD 防护;
  • 智能手机、平板、笔记本、消费类电子的边缘接口保护;
  • 工业控制、人机界面、传感器输入等需抗静电的场合;
  • PCB 边缘、连接器附近作为一级防护元件使用。

四、PCB 布局与应用建议

  • 靠近信号进入点(如连接器)安置,走线短且粗,以便迅速将脉冲导入接地;
  • 为获得最佳性能,确保附近有低阻抗接地平面,并在靠近器件处设置过孔连接至主地;
  • 对于高密度布局,遵循厂商推荐的焊盘与回流工艺参数以保证焊接可靠性;
  • 在高速线路上使用前,请评估 Cj 对信号眼图的影响,并进行必要的仿真或测试。

五、设计注意事项

  • 虽然 Vrwm=5 V 适用于 5 V 系统,但钳位电压为 12 V,设计时需确认所保护器件能承受该短时钳制电压;
  • 对于更高能量或重复冲击场合,可并联或选用更高功率等级的 TVS;
  • 在敏感模拟电路或极低漏电预算系统中,注意 Ir 的累积影响并做好系统级能耗评估。

六、结论

ESDTU5V0A1 以其双向保护、低结电容与小型 DFN 封装,为 5 V 及高速数据接口提供了一种低影响、高可靠性的 ESD 保护解决方案。适合空间受限且对信号完整性有要求的消费电子和工业设备,设计时结合 PCB 布局与受保护器件耐压特性进行验证,可获得最佳保护效果。若需详细封装尺寸、焊盘建议及热/电参数,请参阅厂商完整数据手册。

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