WMSIC Electronic Components

CJ 3DD13003

Model3DD13003
PackageTO-252-2
BrandCJ
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Date code within 2 years

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
CJ 3DD13003
Type
CJ
Minimum package
2500 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
CJ
Electronic Component
3DD13003
Electronic Component
1
Package
TO-252-2
Electronic Component
1 NPN
Electronic Component
Transistor(BJT)
Electronic Component
2.708g
Electronic Component
1
Electronic Component
BM0227365618
Operating Temperature
55℃~+150℃
Transistor Type
NPN
Frequency(f T)
5MHz
Power Dissipation(Pd)
2W
Electronic Component
Electronic Component
Electronic Component
2500

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

3DD13003 产品概述

一、概述

3DD13003 为高压 NPN 功率晶体管,品牌 CJ(江苏长电/长晶)提供的器件适用于高压开关和功率放大场合。器件标称型号常见为 3DD13003,描述中出现 TO-126 标识,但本件封装信息为 TO-252-2,实际采购时请以出厂数据表为准。该器件单片数量:1 个 NPN。

二、主要电气参数

  • 直流电流增益 hFE:≈40(测试条件:Ic = 0.5 A,Vce = 5 V)
  • 集电极-基极截止电流 Icbo:1 mA
  • 集电极电流 Ic(最大):1.5 A
  • 集电极-发射极击穿电压 Vceo:400 V(高压等级,适合中低频高压开关)
  • 射极-基极击穿电压 Vebo:9 V
  • 特征频率 fT:≈5 MHz(适合中低频开关,非高频 RF 场合)
  • 集电极饱和电压 VCE(sat):约 600 mV(参考条件下,如 Ic=1 A、Ib=0.25 A)
  • 耗散功率 Pd:2 W(温升显著,需注意散热)
  • 工作温度范围:-55 ℃ 至 +150 ℃

三、典型应用场景

  • 开关电源(如反激式或隔离型电源)中的高压开关管
  • 线性或开关式功率放大与驱动电路(中低频)
  • 灯光驱动、家电控制和工业控制中的高压开关应用
  • 要求高 Vce 而电流中等(≤1.5A)且频率不高的电路

四、使用要点与设计建议

  • 散热管理:Pd 仅 2 W,且在高 Vce 与中等 Ic 条件下损耗较大,建议在实际 PCB 设计中增加大面积铜箔或采用散热片,必要时限制连续导通时间。
  • 驱动要求:hFE 在 0.5 A 条件下约 40,开关时需提供足够的基极电流(Ib ≈ Ic/hFE),同时注意基极电容与恢复时间对开关速度的影响。
  • 开关损耗与速度:fT ≈ 5 MHz,适合中低频应用;在高频开关场合切换损耗和延迟会增大,需评估能否满足效率要求。
  • 保护措施:基极-射极击穿电压仅 9 V,避免直接加大反向电压;电路应设计限流与电压钳位(如二极管或 RC 吸收)以防击穿和浪涌。
  • 寿命与可靠性:高温长期工作会影响可靠性,建议在最大结温以下运行并参考数据手册的热阻参数进行热仿真。

五、封装与采购注意

  • 本件标注封装为 TO-252-2,描述中出现 TO-126,购买时务必核对供应商给出的封装图与引脚定义,避免装配错误。
  • 在选型时若需更高频率或更低饱和压,应考虑替代型号;若需更大功耗或更高电流,应选择更大封装或并联方案并注意热均流。
  • 建议获取并参照厂家完整数据手册(包含 V-I 曲线、开关特性、热阻及引脚定义)以完成电路设计与可靠度评估。

总结:3DD13003 为一款高耐压、中等电流的 NPN 功率晶体管,适用于需要 400 V 等级开关能力且频率不高的电源与控制场合。合理的热设计、基极驱动与过压保护是保证其可靠工作的关键。

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