WMSIC Electronic Components

CJ ES1BL

ModelES1BL
PackageSOD-123FL
BrandCJ
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
CJ ES1BL
Type
CJ
Minimum package
3000 未知

Technical parameters

Electronic Component
Electronic Component
Electronic Component
CJ
Electronic Component
ES1BL
Electronic Component
1
Package
SOD-123FL
Electronic Component
Fast Recovery / High-Efficiency Diode
Electronic Component
0.033g
Electronic Component
1
Electronic Component
BM0228274050
Current
1A
Diode
1
Current(Ir)
5uA
(Vf)
950mV@1A
Electronic Component
55℃~+150℃
Electronic Component
Electronic Component
Electronic Component
3000

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

ES1BL 超快恢复二极管 产品概述

ES1BL 是 CJ(江苏长电/长晶)生产的一款超快恢复整流二极管,采用 SOD-123FL 小体积封装,适用于高速开关电源、反向保护、整流和自由轮回路等场合。该器件在 1A 连续整流电流下表现稳定,具有较低的正向压降与快速的恢复特性,能有效降低开关损耗与电磁干扰。

一、主要规格亮点

  • 工作结温范围:-55℃ ~ +150℃
  • 直流正向压降(Vf):0.95 V @ 1 A
  • 非重复峰值浪涌电流(Ifsm):30 A
  • 直流反向耐压(Vr):100 V
  • 反向电流(Ir):5 μA(典型测试条件下)
  • 反向恢复时间(Trr):35 ns
  • 额定整流电流:1 A
  • 封装形式:SOD-123FL(小型表面贴装)

二、器件特性与优势

  • 超快恢复:Trr ≈ 35 ns,适合高频开关场合,能显著减小反向恢复引起的开关损耗与电压尖峰,降低系统功率损耗与 EMI。
  • 低正向压降:在 1 A 条件下 Vf ≈ 0.95 V,有利于降低导通损耗,提升效率。
  • 良好抗浪涌能力:Ifsm 达 30 A,能承受短时充放电或浪涌冲击,提升可靠性(注意按规定的非重复峰值浪涌测试条件使用)。
  • 宽温度范围:-55℃ 至 +150℃ 的工作结温,适用于工业级和高温环境。

三、电气参数应用解读

  • 导通损耗估算:在 1 A 工作电流时,导通损耗约为 P ≈ Vf × I = 0.95 W,设计时需考虑封装散热能力与实际脉冲/占空比。
  • 反向恢复与开关损耗:35 ns 的恢复时间表示在快切换边沿时仍会有有限的反向电流峰值,建议在高频或高电压斜率场合考虑合适的缓冲/吸收措施以抑制振铃与过压。
  • 反向泄漏:Ir 约 5 μA,随着温度升高泄漏会增加,长时间在高温高压下工作时需评估对系统静态功耗与热平衡的影响。

四、典型应用场景

  • 开关电源(SMPS)中的整流与续流二极管
  • DC-DC 转换器整流、输出二极管
  • 电池充放电与保护电路的反向保护
  • 工业及汽车电子中对速度和效率有要求的小功率整流场合

五、封装与布局建议

  • SOD-123FL 封装体积小,适合高密度 PCB 设计。由于封装散热能力有限,建议在 PCB 上增大铜箔面积以提升散热(尤其是二极管的焊盘下方和周围)。
  • 布局时将二极管靠近开关器件放置,缩短信号回路面积以减少寄生电感,必要时在开关节点加入 RC 缓冲或 TVS 抑制尖峰。
  • 对于会承受较大脉冲电流的应用,建议采用短而宽的走线,并检查焊点可靠性以避免局部过热。

六、可靠性与选型建议

  • 在选型时应对 Ifsm、Vf 和 Trr 等关键参数进行系统级评估,避免持续接近极限工作点,留有足够裕量。
  • 高温环境下注意反向漏电与结温上升的影响,必要时选用散热措施或更高额定器件。
  • 对于高频、高功率或要求极低恢复电流的场合,可考虑更高性能的肖特基二极管或更低 Trr 的器件作为替代。

总结:ES1BL 以其超快恢复特性、较低正向压降和小型 SOD-123FL 封装,为中小功率高速开关应用提供了性价比较高的整流解决方案。在实际设计中,建议关注热管理、回路寄生与反向恢复带来的瞬态影响,以确保长期稳定可靠运行。若需封装引脚图、典型电气特性曲线或推荐 PCB 尺寸,请告知,我可以提供更详细的设计参考。

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