WMSIC Electronic Components

CJ RS1B

ModelRS1B
PackageSMAJ
BrandCJ
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
CJ RS1B
Type
CJ
Minimum package
5000 未知

Technical parameters

Electronic Component
Electronic Component
Electronic Component
CJ
Electronic Component
RS1B
Electronic Component
1
Package
SMAJ
Electronic Component
Fast Recovery / High-Efficiency Diode
Electronic Component
0.097g
Electronic Component
1
Electronic Component
BM0264678768
Current
1A
Diode
1
Current(Ir)
5uA
(Vf)
1.3V@1A
Electronic Component
55℃~+150℃
Electronic Component
Electronic Component
Electronic Component
5000

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

RS1B 产品概述

一、产品简介

RS1B 是江苏长电(CJ)推出的一款快恢复/高效率整流二极管,单只独立封装,型号常用于中低功率整流与开关恢复场合。器件设计侧重在较低正向压降与可控的反向恢复特性之间取得平衡,适合需要兼顾效率与成本的电源、马达驱动及保护电路。

二、主要电气参数

  • 二极管配置:1个独立式
  • 正向压降(Vf):1.3 V @ 1 A
  • 直流反向耐压(Vr):100 V
  • 正常整流电流(If):1 A(直流)
  • 反向电流(Ir):5 μA(常见测试条件下)
  • 反向恢复时间(Trr):150 ns
  • 非重复峰值浪涌电流(Ifsm):30 A(单次脉冲)
  • 工作结温范围:-55 ℃ ~ +150 ℃
  • 封装:SMAJ(表面贴装小封装,具体尺寸请参见厂方数据手册)
    以上参数为典型/标称值,实际选型和电路设计应以完整数据手册为准。

三、结构与封装

RS1B 采用 SMAJ 封装,适合自动贴装与回流焊工艺,兼顾体积与散热能力。SMAJ 封装便于在紧凑电路板上实现多点布置,同时允许在一定程度上通过 PCB 铜箔进行散热管理。典型应用中无需额外散热器,但在高平均电流或高开关损耗场景下应合理增大铜箔面积或采用散热措施。

四、性能亮点与应用场景

  • 低正向压降:1 A 时 Vf 约 1.3 V,可在中等电流下减小整流损耗,提高系统效率。
  • 低反向漏电:5 μA 的级别有利于待机与低功耗系统控制反向泄漏。
  • 快恢复特性:150 ns 的反向恢复时间属于“快恢复”范畴,适合中低至中等开关频率的开关电源与逆变电路。
  • 良好抗浪涌能力:30 A 的单次浪涌电流能力适用于开机浪涌或短时过载情形。
    典型应用包括:开关电源输出整流、功率二次侧整流、充电器、适配器、直流电机驱动的自由轮整流、反向极性保护及某些吸收/钳位电路。

五、使用与布局建议

  • 布局:尽量缩短二极管与电感/开关器件之间的走线,减少寄生电感以降低开关瞬态振荡和电磁干扰。
  • 散热:在可能的情况下为二极管铜箔增加散热面积,尤其在长时间接近 If=1 A 工作或频繁浪涌场景下。
  • 驱动频率匹配:150 ns 的 Trr 意味着在较高频率下(例如数百 kHz 以上)会带来较大的开关损耗和电磁干扰,若系统频率较高或要求极低开关损耗,应考虑超快速恢复或肖特基二极管替代方案。
  • 测试条件:器件参数通常在 25 ℃ 标准条件下测得,实际工作时需考虑结温上升对 Vf、Ir 的影响(高温下 Vf 略降、Ir 增大)。

六、选型及替代建议

  • 若系统更重视极低正向压降以提升效率(尤其在高频低压输出场合),可优先考虑肖特基二极管,但需注意肖特基的耐压及漏电特性限制。
  • 若要求更短的反向恢复时间以减少开关损耗和 EMI,应选择 Trr 更短的超快速恢复二极管(如几十 ns 级别)。
  • 在需要更高电流承受能力或更大浪涌能力的场合,选择更大封装或更高 Ifsm 额定的器件。

七、可靠性与注意事项

RS1B 的工作结温范围为 -55 ℃ 至 +150 ℃,适应工业级温度需求。非重复峰值浪涌电流为 30 A,适合短时浪涌保护,但不适合长期超额负载。使用前建议阅读厂方完整数据手册,关注最大额定值、热阻、典型曲线(Vf-T、Ir-V、Trr 与 di/dt 相关特性)以及推荐的回流焊温度曲线。最后,实际产品可靠性受 PCB 设计、冷却条件和实际工作环境影响,关键应用应做足温升和寿命评估。

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