WMSIC Electronic Components

CJ PZTA42

ModelPZTA42
PackageSOT-223-3
BrandCJ
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Date code within 2 years

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
CJ PZTA42
Type
CJ
Minimum package
2500 编带

Technical parameters

Electronic Component
Electronic Component
Electronic Component
CJ
Electronic Component
PZTA42
Electronic Component
1
Package
SOT-223-3
Electronic Component
1 NPN
Electronic Component
Transistor(BJT)
Electronic Component
0.243g
Electronic Component
1
Electronic Component
BM0230014263
Operating Temperature
55℃~+150℃
Transistor Type
NPN
Frequency(f T)
50MHz
Power Dissipation(Pd)
1W
Electronic Component
Electronic Component
Electronic Component
2500

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

PZTA42 产品概述

一、产品简介

PZTA42 为高压 NPN 功率三极管,单颗器件额定集电极电流 Ic 可达 200mA,集射极击穿电压 Vceo 300V,耗散功率 Pd 为 1W。该器件由 CJ(江苏长电/长晶)生产,采用 SOT-223-3 封装,适用于中低电流、高电压场合的开关与放大应用。器件工作温度范围宽 (-55℃ ~ +150℃),适应工业级环境。

二、主要参数与电气性能

  • 类型:NPN 双极型晶体管(BJT)
  • Ic:200mA(最大)
  • Vceo:300V(集射极击穿电压)
  • Pd:1W(封装级别热耗散)
  • hFE(直流电流增益):25 @ Ic=1mA, Vce=10V(表征低电流放大能力)
  • fT(特征频率):约 50MHz(适用于低中频信号放大)
  • Icbo(集电极截止电流):典型 100nA(低漏电流,但随温度上升)
  • VCE(sat)(饱和电压):典型 500mV @ IC=20mA,IB=2mA(开关饱和特性)
  • Vebo(射基极击穿电压):6V(基-发反向电压限制)

注:上述各项参数需参考具体器件数据手册中的测量条件与典型/最大值说明。

三、热管理与功耗注意

PZTA42 在 SOT-223-3 封装下 Pd 标称为 1W,但实际热性能受到电路板铜箔面积、散热路径及环境温度影响。高压应用中须注意:

  • 尽量扩展 PCB 散热铜箔并采用多层地铜,以降低结温;
  • 在高占空比或连续导通情况下进行功耗和结温计算,必要时降额使用或改用更大封装器件;
  • 考虑热阻和热阻-结至环境的关系,确保结温不超过最大额定值以保证长期可靠性。

四、典型应用场景

  • 高压开关电路:驱动小型继电器或继电器前置级;
  • 电源与变换器:高压脉冲驱动、电源抽头开关(低功率);
  • 信号放大:中低频模拟放大、电平转换与信号驱动;
  • 测试与保护电路:高压检测、断路保护前置器件(注意基极反向电压保护)。

五、使用要点与电路建议

  • 基极驱动:为了快速进入饱和且降低 VCE(sat),建议按数据手册计算合适的基极电流,参考典型值 IC/IB ≈ 10,使得在 IC=20mA 时 IB≈2mA 可获得 ~500mV 饱和压;
  • 反向保护:Vebo=6V,避免对基-发间施加反向电压超过该值,可在必要时并联反向保护二极管或限压网络;
  • 漏电与高温影响:Icbo 随温度显著上升,高温环境下需评估漏电对电路性能的影响;
  • 安全工作区(SOA):在高压低电流或低压高电流的组合下注意器件的 SOA 限制,避免在靠近极限的工况长期工作。

六、封装与订购信息

  • 品牌:CJ(江苏长电/长晶)
  • 型号:PZTA42(NPN,高压、1W)
  • 封装:SOT-223-3(表面贴装,便于中等散热设计)
  • 数量:1 个(单件采购) 购买或布局时请按厂家数据手册确认引脚定义与焊接工艺,遵循推荐回流曲线以保证可靠性。

总结:PZTA42 以其 300V 的高压等级与 200mA 的电流能力,适合需要高压耐受且功率不大的开关与放大场合。合理的基极驱动与热管理是发挥其性能并保证长期可靠性的关键。

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