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CJ CJAB55N03S
Configuration
1 options
Configuration
Date code within 2 years
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- CJ CJAB55N03S
- Type
- CJ
- Minimum package
- 5000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- CJ
- Electronic Component
- CJAB55N03S
- Electronic Component
- 1
- Package
- PDFNWB-8L(3.3x3.3)
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 0.12g
- Electronic Component
- 1
- Electronic Component
- BM0233592065
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 40W
- Electronic Component
- Electronic Component
- Electronic Component
- 5000
- Voltage(Vdss)
- 30V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
CJAB55N03S 产品概述
一、产品简介
CJAB55N03S 是江苏长电（CJ）出品的一款低压、大电流 N 沟道功率 MOSFET，额定漏源电压 Vdss 为 30V，最大连续漏极电流 55A。器件针对开关损耗和导通损耗优化，适合高速开关与低阻抗导通场合。封装为 PDFNWB-8L (3.3×3.3mm)，利于高密度电路板设计与热管理。
二、主要参数
- 类型：N 沟道 MOSFET
- Vdss：30V
- Id（连续）：55A
- RDS(on)：典型 3.8mΩ @ VGS=10V；9.5mΩ @ VGS=4.5V
- Vgs(th)：2.5V @ 250µA
- 总栅电荷 Qg：50nC @ VGS=10V
- 输入电容 Ciss：2.8nF；输出 Coss：295pF；反向传输 Crss：240pF
- 功率耗散 Pd：40W
- 工作温度：-55℃ ～ +150℃
- 封装：PDFNWB-8L (3.3×3.3mm)
三、关键特性与优势
- 低导通电阻：在 10V 驱动下 RDS(on) 低至约 3.8mΩ，适合高电流低压降应用，降低导通损耗与发热。
- 适中栅电荷：Qg≈50nC，在保持低 RDS(on) 的同时兼顾开关能耗与驱动需求，利于同步整流和降压转换器应用。
- 紧凑封装与良好散热：PDFNWB-8L 带底部散热焊盘，便于通过铺铜与过孔进行热扩散与散热设计。
- 宽温度范围：-55℃ 至 150℃，适应工业级环境。
四、驱动与布局建议
- 驱动电压：若要求最低导通电阻，建议 VGS = 8–10V；若仅有逻辑电平驱动（4.5V），仍可工作但 RDS(on) 会增大。
- 驱动电流与速度：Qg=50nC，快速开关需选用能提供较大峰值电流的门极驱动器；门极电阻可选 5–20Ω 以平衡振铃与开关损耗。
- PCB 布局：将高电流回路（D-S）走宽铜箔，缩小电流回路面积以降低寄生感抗；门极走线短且隔离高电流回路，靠近器件放置去耦电容。
- 热管理：使用大面积底铜铺设与多组过孔连通顶底层散热，必要时评估外加散热片或散热垫。
五、封装与可靠性注意
PDFNWB-8L 带焊盘应保证平整焊接与良好焊盘设计；在高频开关或高功率运行时，关注热循环与结温上升对长期可靠性的影响，建议在设计阶段进行热仿真与寿命评估。
六、典型应用
- 同步降压转换器（Buck）功率开关
- MOSFET 低侧开关、负载开关与电源管理
- 电机驱动、开关电源、续流二极管替代（同步整流）
- 通信设备、电源模块、高效率电源系统
七、选型结论
CJAB55N03S 在 30V 电压等级中提供了较低的导通电阻与较高的连续电流能力，适合需兼顾高效率与高电流的开关应用。在设计中应根据开关频率、驱动能力与散热条件选择合适的驱动器和 PCB 方案，以发挥该器件的性能优势。
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