WMSIC Electronic Components

CJ SD101AWS

ModelSD101AWS
PackageSOD-323
BrandCJ
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
CJ SD101AWS
Type
CJ
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
CJ
Electronic Component
SD101AWS
Electronic Component
1
Package
SOD-323
Electronic Component
Schottky Diode
Electronic Component
0.031g
Electronic Component
1
Electronic Component
BM0226526711
Current
15mA
Diode
Electronic Component
Current(Ir)
200nA@50V
(Vf)
1V@15mA
Electronic Component
40℃~+125℃
Electronic Component
Electronic Component
Electronic Component
3000

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

SD101AWS 产品概述

一、产品简介

SD101AWS 是江苏长电/长晶(CJ)推出的一款独立式肖特基二极管,采用小型 SOD-323 封装,面向低功耗、空间受限的便携与消费电子应用。作为肖特基结构器件,SD101AWS 在低电压、小电流工况下具有较低的正向压降与较快的恢复特性,适合用作低压整流、反向保护与电源方向控制等功能。

二、主要电气参数

  • 二极管类型:独立式肖特基二极管
  • 正向压降 (Vf):1.0 V @ 15 mA
  • 最大整流电流:15 mA(直流)
  • 非重复峰值浪涌电流 (Ifsm):2 A(脉冲冲击能力)
  • 直流反向耐压 (Vr):60 V
  • 反向电流 (Ir):200 nA @ 50 V(常温条件)
  • 工作结温范围:-40 ℃ ~ +125 ℃

以上参数反映出 SD101AWS 为低功耗、小电流场景优化的肖特基器件:在 15 mA 工作电流下正向压降约 1 V,可降低功耗和发热;200 nA 的反向泄漏在中低电压下保持较低漏电,有利于待机与低功耗系统设计。

三、封装与热、环境特性

SD101AWS 采用 SOD-323 小外形封装,适合表面贴装工艺(SMT),便于高密度 PCB 布局。由于封装体积小,热阻相对较高,长期或持续高电流工作时需关注结温上升;建议在设计时做好热量分散与导热路径规划。器件允许的工作结温范围是 -40 ℃ 至 +125 ℃,应避免超出该范围以保证可靠性与寿命。

四、典型应用场景

  • 低电流整流(小功率充电指示、传感器供电)
  • 反向电源保护(防止接反或防止回流)
  • 电源轨 OR-ing(多电源优先级切换)
  • 信号路径隔离与快速钳位场合
    本器件不适合用作高电流主整流或大功率降压用途,应选用更高电流额定的肖特基或整流器件。

五、使用建议与注意事项

  • 按照工作电流上限(15 mA)与结温范围进行设计,若存在频繁浪涌或较高平均功率应增配散热或选用更大封装型号。
  • 在高温条件下反向漏电可能显著增加,影响待机功耗,应在系统功耗预算中考虑温漂影响。
  • SOD-323 封装适用于常规回流焊工艺,请严格遵循 CJ 提供的焊接曲线与制造商资料以避免热损伤。
  • 尽量缩短输入与输出导线/铜箔的走线长度以减少寄生电感,提升脉冲浪涌承受能力。
  • 对于 ESD 和瞬态尖峰,建议在关键节点配合使用 TVS 或 RC 抑制网络以保护器件。

六、选型建议与替代

若应用需要更高的平均整流电流或更低的正向压降,可考虑封装更大、额定电流更高的肖特基器件;若工作电压需求超过 60 V,应选择更高 Vr 等级的二极管。选型时应综合考量正向损耗、反向漏电、浪涌能力和封装热性能,确保在最差工况下结温不超过额定值。

七、总结

SD101AWS(CJ,SOD-323)是一款针对低功耗、空间受限场景优化的肖特基二极管,具有 1 V@15 mA 的正向压降、60 V 的反向耐压与 200 nA 的低漏电特性,适合用于小电流整流与电源方向控制等应用。设计时需注意热管理与温度下漏电变化,按制造商推荐工艺和参数使用可获得稳定可靠的性能表现。若需更详细的电气特性曲线与焊接规范,请参考 CJ 官方数据手册。

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