WMSIC Electronic Components

CJ MMDT3906

ModelMMDT3906
PackageSOT-363
BrandCJ
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Date code within 2 years

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
CJ MMDT3906
Type
CJ
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
CJ
Electronic Component
MMDT3906
Electronic Component
1
Package
SOT-363
Electronic Component
2 PNP
Electronic Component
Transistor(BJT)
Electronic Component
0.032g
Electronic Component
1
Electronic Component
BM0228055742
Operating Temperature
55℃~+150℃
Transistor Type
PNP
Frequency(f T)
250MHz
Power Dissipation(Pd)
200mW
Electronic Component
Electronic Component
Electronic Component
3000

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

MMDT3906 产品概述

一、概述

MMDT3906 是江苏长电(CJ)生产的双路 PNP 小功率双极结晶体管,封装为 SOT-363(六引脚微型封装),每片含 2 个相同参数的 PNP 晶体管。器件定位于小信号放大与低功耗开关场合,适用于便携式、通讯终端与消费电子产品的空间受限电路。

二、主要参数速览

  • 晶体管类型:PNP(双路)
  • 集电极电流 Ic:200 mA(峰值/短时)
  • 集-射击穿电压 Vceo:40 V
  • 最大耗散功率 Pd:200 mW(封装限制)
  • 直流电流增益 hFE:约 60(条件:Ic=0.1 mA,Vce=1 V)
  • 特征频率 fT:250 MHz(高频小信号放大能力)
  • 集电极截止电流 Icbo:≤50 nA(低漏电流)
  • 集电极饱和电压 VCE(sat):约 400 mV(测试条件 50 mA 与 5 mA)
  • 射-基击穿电压 Vebo:5 V
  • 工作温度范围:-55 ℃ ~ +150 ℃
  • 封装:SOT-363(节省 PCB 面积)

三、性能与适用场景

  • 高频性能:fT≈250 MHz,适合用于射频前端的缓冲、低噪声放大或高频开关,但须注意封装与布局对高频性能的影响。
  • 小信号放大:hFE 在小电流下表现稳定,适用于电压放大、偏置电路和电平转换。
  • 开关应用:在中低电流开关(几十 mA)场合表现良好;VCE(sat)≈400 mV 在 50 mA 时属可接受范围。
  • 低漏电要求:Icbo 仅 50 nA,适合静态功耗敏感电路。

四、热管理与限制

SOT-363 封装 Pd=200 mW,热阻较大,需严格控制功耗:P = Ic × Vce。举例:在 50 mA 且 VCE(sat)≈0.4 V 条件下,管耗约 20 mW,远低于 Pd;但若 Ic 上升到 200 mA、Vce 仍然为 1 V,则功耗约 200 mW,已接近极限。建议在连续工作时避免长期接近最大耗散,必要时采用降低电流或增加散热铜箔。

五、布局与使用注意事项

  • 封装体积小,布局应尽量缩短基极、集电极回流路径,减小寄生电感与电容,改善高频特性。
  • 避免基极反向击穿(Vebo ≤ 5 V),在有反向脉冲的环境中需加保护。
  • 为降低静态漏电对高阻节点影响,留意周边隔离和偏置网络。
  • 焊接工艺按 SMD 标准进行,回流曲线参考厂商数据,避免过热。
  • ESD 防护:器件为小信号晶体管,建议在制造与调试环节做好静电防护。

六、选型建议

若电路要求双路 PNP、封装极小且需兼顾高频与低漏电,MMDT3906 是合适选择。若需要更高连续功率或更大的 Ic 持续能力,应考虑更大封装或功率晶体管。使用前核对具体数据表以确认测试条件与极限参数并做热仿真验证。

总结:MMDT3906 集成度高、频率响应好、漏电小,适合空间受限且对高频、小信号性能有要求的应用场景,但在热设计与电流管理上需谨慎。

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