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CJ UMD9N
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- CJ UMD9N
- Type
- CJ
- Minimum package
- 3000 编带
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- CJ
- Electronic Component
- UMD9N
- Electronic Component
- 1
- Package
- SOT-363
- Electronic Component
- 1 NPN, 1 PNP
- Electronic Component
- Digital Transistor
- Electronic Component
- 0.03g
- Electronic Component
- 1
- Electronic Component
- BM0229991282
- Operating Temperature
- 55℃~+150℃
- Resistor
- 5.7
- Resistor
- 13kΩ
- Transistor Type
- NPN+PNP
- Frequency(f T)
- 250MHz
- Power Dissipation(Pd)
- 150mW
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
UMD9N D9（CJ 长晶）产品概述
一、主要参数
UMD9N 是由 CJ（江苏长电/长晶）推出的双数字晶体管，采用 SOT-363 小封装。关键电气参数如下：
- 集-射极击穿电压 Vceo：50 V
- 集电极电流 Ic（最大）：100 mA
- 耗散功率 Pd：150 mW（封装及环境依赖）
- 直流电流增益 hFE：典型 68（Ic = 5 mA，VCE = 5 V）
- 最小输入电压 VI(on)：1.4 V
- 输出饱和电压 VO(on)：典型 300 mV
- 输入电阻（内置电阻）：约 13 kΩ，电阻比率 5.7
- 工作温度范围：-55 ℃ ~ +150 ℃
二、产品特性
- 小型化集成：SOT-363（超小型六脚）封装，适合高密度 PCB 设计，节省空间。
- 内置偏置电阻：每路输入带有约 13 kΩ 的内置电阻，简化外围电路，无需外接基极限流电阻，便于直接与逻辑输出相连。
- 良好开关性能：VI(on) 仅 1.4 V，适合 1.8V/3.3V/5V 等多种逻辑电平驱动；VO(on) 典型 300 mV，在中小电流下具有较低导通压降。
- 可靠性高：宽温度范围（-55~150 ℃）适用于工业级应用。
三、典型应用场景
- 微控制器驱动与接口缓冲（LED 驱动、小型继电器或开关元件的基驱动）
- 电平转换与信号复用，适用于 3.3 V/5 V 系统间驱动
- 家电控制、消费电子、便携设备以及汽车电子中需要双路开关功能且占板空间受限的场合
四、封装与热管理
UMD9N 的 SOT-363 封装热阻较大，Pd 仅 150 mW，实际允许的持续集电极电流受限于封装散热和 PCB 设计。若在接近最大 Ic（100 mA）条件下工作，应：
- 采用较大铜箔面积或散热填充地/电源层以降低结到环境的热阻；
- 在频繁开关或高占空比应用中评估结温，避免超过封装 Pd 导致热失效。
五、使用建议与注意事项
- 虽可驱动到 100 mA 峰值，建议在连续工作时控制 Ic 于安全范围内，并考虑功耗 Pd 限制；
- 内置电阻方便但在特殊需求下（如精确基流或高速开关）需评估其对开关速度和饱和程度的影响；
- 引脚排列与功能请参考厂方数据手册，设计 PCB 布线时注意短回路路径和充分散热区域。
六、品牌与采购
UMD9N 型号由 CJ（江苏长电/长晶）生产，D9 为封装/版本标识。购买时建议核对完整规格书与原厂标识，确保与设计需求一致。
总结：UMD9N 提供双路集成数字晶体管方案，集成基极电阻、占用板面小，适合中低电流开关与驱动场景。设计时需注意封装散热和连续功耗约束，以确保长期可靠运行。
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