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CJ ESDSU5V0A1
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- CJ ESDSU5V0A1
- Type
- CJ
- Minimum package
- 10000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- CJ
- Electronic Component
- ESDSU5V0A1
- Electronic Component
- 1
- Package
- DFNWB1.0x0.6-2L
- Electronic Component
- Electronic Component
- Type
- ESD
- Electronic Component
- ESD and Surge Protection (TVS / ESD)
- Electronic Component
- 0.01g
- Electronic Component
- 1
- Cj- Capacitor
- 0.24pF
- Electronic Component
- BM0230015476
- Voltage
- 20V
- Electronic Component
- IEC 61000-4-2
- Current(Ir)
- 500nA
- Voltage(VBR)
- 9V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
ESDSU5V0A1 产品概述
一、产品简介
ESDSU5V0A1 是长晶（CJ）推出的一款双向瞬态电压抑制二极管（ESD保护器件），封装为 DFN1006-2（SOD-882）。该器件专为保护低压高速信号线和接口免受静电放电和瞬态浪涌影响而设计，具有低结电容、低漏电和高脉冲吸收能力，适用于手机、消费电子、数据通信及工业控制等场景。
二、主要电气参数
- 极性：双向（bidirectional），可在两方向对称钳位。
- 反向截止电压 Vrwm：5 V（工作反向电压）。
- 击穿电压 Vbr：9 V（典型/最小击穿）。
- 钳位电压 Vc：20 V（在指定脉冲条件下的典型钳位）。
- 峰值脉冲电流 Ipp：4 A（瞬态冲击电流吸收能力）。
- 峰值脉冲功率 Ppp：80 W（短脉冲能量吸收能力）。
- 反向电流 Ir：500 nA（在 Vrwm 下的小信号泄漏）。
- 结电容 Cj：0.24 pF（极低电容，利于高速信号完整性）。
- 防护等级/标准：符合 IEC 61000-4-2 静电放电防护要求（ESD）。
三、主要特点与优势
- 低结电容（0.24 pF）：对高速数据线（USB、HDMI、MIPI 等）影响极小，保持信号完整性。
- 双向保护：无需额外极性处理，适合双向数据线与差分信号。
- 高峰值吸收能力：在短时瞬态下提供 4 A / 80 W 的保护，提升接口可靠性。
- 低漏电流：500 nA 的低反向电流适合低功耗和电池供电设备。
- 小型封装 DFN1006-2（SOD-882）：占板面积小，便于高密度布局与自动贴装。
四、典型应用
- 手机与可穿戴设备的外部接口保护（USB、充电口）。
- 高速信号线与差分对保护（数据总线、通讯接口）。
- 消费电子、平板、笔记本和IoT终端的 I/O 端口。
- 工业控制与仪表的弱信号线路防护（抗静电、浪涌）。
五、布局与使用建议
- 将器件尽量靠近需要保护的接口引脚放置，缩短 PCB 上的走线长度以降低感抗。
- 对于接地，建议使用同一参考地并配合短且粗的回流路径，以增强脉冲能量传导至地。
- 在高速差分线上，注意匹配阻抗和对称布局，避免在保护器件处引入不必要的串扰。
- 焊接兼容回流工艺，推荐遵循制造商的焊接温度曲线与 PCB 焊盘尺寸。
六、可靠性与合规
ESDSU5V0A1 针对 IEC 61000-4-2 ESD 测试场景设计，能在指定脉冲条件下提供稳定的钳位和重复保护性能。实际系统设计中建议结合器件数据手册进行脉冲测试验证，以确认在目标工作条件下的保护裕度。
如需进一步的电气曲线、封装尺寸（焊盘建议）或样品与封装库存信息，可联系长晶（CJ）渠道或查阅 ESDSU5V0A1 的详细规格书。
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