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CJ CJK3407
Configuration
1 options
Configuration
Date code within 2 years
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- CJ CJK3407
- Type
- CJ
- Minimum package
- 3000 编带
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- CJ
- Electronic Component
- CJK3407
- Electronic Component
- 1
- Package
- SOT-23-3L
- Electronic Component
- 1 P
- Type
- P
- Electronic Component
- MOSFET
- Electronic Component
- 0.028g
- Electronic Component
- 1
- Electronic Component
- BM0228151792
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 300mW
- Gate Voltage(Vgs)
- ±20V
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
CJK3407 产品概述
一、产品简介
CJK3407 是江苏长电/长晶（CJ）推出的一款 P 沟道增强型场效应管（P‑MOSFET），采用 SOT‑23‑3L 小封装设计。器件的主要电气参数为：漏源电压 Vdss = 30V，连续漏极电流 Id = 4.1A，导通电阻 RDS(on) = 60mΩ（在 VGS = −10V 时测试），耗散功率 Pd = 300mW。器件输入电容 Ciss ≈ 700pF，反向传输电容 Crss ≈ 75pF，工作温度范围为 −55℃ 至 +150℃，适合便携与空间受限的电源管理场景。
二、主要特性
- 低压至中压 P 沟道器件，适用于最高 30V 的电源轨。
- 在标准驱动电压（VGS = −10V）下具有 60mΩ 的较低导通电阻，兼顾导通损耗与封装尺寸。
- 较小的封装和中等输入电容（Ciss 约 700pF）使其在开关速度和驱动能耗之间取得平衡。
- 宽工作温度范围与行业级可靠性，适应工业级与消费类产品环境。
三、典型应用场景
CJK3407 适用于多种需要 P 沟道高端开关的小功率电源管理电路，包括但不限于：
- 电池供电设备的高端开关/电源路径控制（power path control）；
- 便携式设备的反向保护与负载断开；
- 小功率 DC‑DC 升压/降压模块中的同步或旁路开关；
- LED 驱动与功率分配开关；
- 需要节省 PCB 面积的自动切换或电源选择电路。
四、封装与热管理
CJK3407 采用 SOT‑23‑3L 小型封装，适合表面贴装制造。封装体积小但热阻相对较高，标称耗散功率为 300mW（在理想散热条件下）。在实际 PCB 设计中，应通过增加铜箔面积、使用散热过孔以及邻近地/电源平面来改善散热性能，并按照厂商建议对功率做温度降额处理，确保在高温工况下可靠工作。
五、使用建议与注意事项
- 为达到 RDS(on) 标称值，建议在驱动时施加接近 −10V 的栅极电压（注意系统中栅源电压上限）。
- 在高频开关场合，Ciss 与 Crss 会影响开关损耗和 EMI，必要时可加栅阻或缓冲驱动以控制 dv/dt。
- 注意器件的体二极管在反向或换向时的导通和损耗特性；在某些拓扑下需并联二极管或采用软开关策略。
- 进行布局时应缩短栅极回路、增大散热铜箔，并考虑 ESD 保护与焊接温度规范以保证可靠性。
CJK3407 在功率与体积之间提供了良好折衷，适合对空间与成本敏感且需实现高端开关功能的电子设备。选型和最终电路设计时建议参考完整器件数据手册并在目标环境下做必要的功率与热仿真验证。
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