WMSIC Electronic Components

CJ CJAB25P03

ModelCJAB25P03
PackagePDFNWB-8(3x3)
BrandCJ
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
CJ CJAB25P03
Type
CJ
Minimum package
5000 编带

Technical parameters

Electronic Component
Electronic Component
Electronic Component
CJ
Electronic Component
CJAB25P03
Electronic Component
1
Package
PDFNWB-8(3x3)
Electronic Component
1 P
Electronic Component
MOSFET
Electronic Component
0.12g
Electronic Component
1
Electronic Component
BM0228089313
Operating Temperature
55℃~+150℃
Electronic Component
Electronic Component
Electronic Component
5000
Voltage(Vdss)
30V
Capacitor(Ciss)
1.7nF
Gate (Qg)
30nC@10V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

CJAB25P03 产品概述

一、产品简介

CJAB25P03 是江苏长电(CJ)出品的一款 P 沟道功率场效应管,面向中低压、较大电流的高侧开关与电源分配应用。器件主要参数如下(典型/标称):

  • 封装:PDFNWB-8(3 × 3 mm),带散热裸露焊盘
  • 漏源电压 Vdss:30 V
  • 连续漏极电流 Id:25 A
  • 导通电阻 RDS(on):20 mΩ @ 10 V, 10 A
  • 阈值电压 Vgs(th):约 1 V(|Vgs(th)| ≈ 1 V,P 沟道阈值为负值)
  • 栅极电荷 Qg:30 nC @ 10 V
  • 输入电容 Ciss:1.7 nF @ 15 V
  • 反向传输电容 Crss:205 pF @ 15 V
  • 工作温度范围:-55 ℃ ~ +150 ℃
  • 额定功耗(参考):3 W(具体以数据手册及 PCB 散热条件为准)
  • 数量:1 个 P 沟道

本器件以低导通电阻和紧凑封装为特点,适合需要高效低损耗高侧开关的场景。

二、主要电气特性说明

  • 低 RDS(on):20 mΩ(在 10 V 驱动条件下)意味着在中等电流工作时导通损耗较低。例如,10 A 时的 I²R 损耗约 2 W。
  • 高电流容量:标称连续 25 A,可应对较大的负载,但需配合良好 PCB 散热。
  • 阈值与门极驱动:|Vgs(th)| ≈ 1 V,完全导通需较大驱动电压(通常以 -10 V 相对于源极计算 P 沟道的 RDS(on) 性能)。
  • 开关特性:Qg = 30 nC、Ciss = 1.7 nF 表明门极驱动电荷与输入电容适中;Crss = 205 pF 表明 Miller 电容不算小,快速切换时需注意 Miller 效应引起的电压摆率与瞬态冲击。

三、封装与热管理

PDFNWB-8(3×3 mm)小型化封装有助于降低寄生电感并节省 PCB 面积。封装通常带有中心大热垫(exposed pad),通过在 PCB 下方增加焊盘及多层过孔(vias)将热量传导至内层/背面散铜以提升散热能力。器件标称功耗 3 W 表明在没有额外散热措施下,持续高电流运行受限,建议在设计中:

  • 在焊盘下增加足够的散热铜面积与多导热过孔;
  • 保证焊接良好以降低导热阻;
  • 对长期高电流(接近或超过 10 A)场合采用散热增强或降低占空比设计。

四、典型应用场景

  • 高侧负载开关(12 V/24 V 系统)
  • 电源路径管理与电池保护(反向电流阻断、断开)
  • DC–DC 降压/升压转换器的同步整流(配合拓扑使用)
  • 电机驱动的保护开关与短路限流
  • 工业与汽车电子(工作温度范围支持严苛环境)

五、驱动与开关设计建议

  • 驱动电压:为达到标称 RDS(on),通常需要将栅极相对于源极拉低约 10 V(即 Vgs ≈ -10 V)。注意不要超过器件额定 Vgs(请参阅数据手册)。
  • 门极控制:建议串联小阻值门极电阻(典型 10–100 Ω)以抑制振荡并控制 dv/dt,特别是在存在较大寄生电感和 Miller 电容时。
  • 开关损耗估算:单次开关能量可近似由 Qg 与驱动电压估算,E_gate ≈ 0.5·Qg·Vdrive ≈ 0.5·30 nC·10 V = 150 nJ(每次切换),驱动功率随开关频率增长。
  • Miller 效应:Crss = 205 pF,快速切换时易导致栅极电压回升或延迟,必要时使用适当的 RC 吸收或缓冲栅极网络以减小应力与 EMI。

六、PCB 布局与可靠性建议

  • 尽量缩短源极与地的回流路径,减小寄生电感与电阻;
  • 中心热垫尽量完整焊接,并通过多盏过孔连接到内部或底层散铜;
  • 输出和输入走线加宽,保证电流路径的低阻抗;
  • 对于需要电磁兼容或抑制浪涌的场景,建议加入 TVS、RC 吸收器或缓启动电路;
  • 在高温或长时间高流应用中,按数据手册给出的热阻和最大结温进行热平衡计算,避免长期过热导致可靠性下降。

七、优点与选型注意事项

优点:低 RDS(on)、紧凑封装、高电流能力和宽温度范围,适合空间受限但功率要求较高的应用。
注意事项:标称 25 A 连续电流需要配合良好散热设计;RDS(on) 与 Id 规格通常在特定测试条件下给出(例如 Vgs = -10 V、特定 PCB 散热),选型时请对照完整数据手册确认 Vgs 最大值、脉冲限流能力和 SOA。

总结:CJAB25P03 以其低导通阻抗与紧凑的 PDFNWB-8 封装,适合用作高侧开关和电源路径管理元件。合理的驱动、布局与散热设计将充分发挥其在中低压大电流场合的性能优势。若用于关键应用,建议参照厂商完整数据手册并做热仿真验证。

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