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CJ MMBD914
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- CJ MMBD914
- Type
- CJ
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- CJ
- Electronic Component
- MMBD914
- Electronic Component
- 1
- Package
- SOT-23
- Electronic Component
- Switch Diode
- Electronic Component
- 0.036g
- Electronic Component
- 1
- Electronic Component
- BM0227365937
- Current
- 300mA
- Diode
- Electronic Component
- Current(Ir)
- 1uA@75V
- (Vf)
- 1.25V@150mA
- Power Dissipation(Pd)
- 350mW
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
MMBD914 产品概述
一、产品简介
MMBD914 是 CJ（江苏长电/长晶）生产的一款独立式开关二极管，采用 SOT-23 封装，针对高速开关和小信号整流应用优化。器件在中低电流工作点具有较低的正向压降和快速的反向恢复特性，适合便携式电源、信号整形及保护电路中作为开关或整流元件使用。
二、主要参数
- 正向压降 (Vf)：1.25 V @ 150 mA
- 直流反向耐压 (Vr)：100 V
- 整流电流：300 mA（连续工作）
- 非重复峰值浪涌电流 (Ifsm)：500 mA
- 反向电流 (Ir)：1 µA @ 75 V
- 反向恢复时间 (Trr)：4 ns（高速开关特性）
- 耗散功率 (Pd)：350 mW
- 封装：SOT-23
以上参数为典型或额定值，设计时应参考器件数据手册进行裕度设计。
三、性能特点
- 低正向压降：在 150 mA 工作点 Vf≈1.25 V，有利于降低导通损耗和电压跌落。
- 高反向耐压：100 V 的反向耐压使其可用于较高电压的阻断场合。
- 快速恢复：4 ns 的反向恢复时间适合开关频率较高的电路，减少开关损耗与反向恢复引起的尖峰。
- 低漏电流：在 75 V 时 Ir≈1 µA，适合对漏电有限制的高压应用。
- 紧凑封装：SOT-23 有利于高密度 PCB 布局与自动贴装。
四、典型应用
- 开关电源中的快恢复整流或钳位二极管
- 逆变/驱动电路的吸收/钳位元件
- 信号整形、取样与脉冲整流电路
- 交流/直流小电流保护与堵截应用
- 便携设备与工业控制中对体积与速度有要求的场合
五、封装与热管理
SOT-23 封装体积小，但热阻相对较高。器件耗散功率 Pd 为 350 mW，实际散热能力与 PCB 铜箔面积、铺铜与通孔情况密切相关。建议：
- 在正向或高频开关应用中进行功耗估算并留有裕量；
- 采用较大面积的散热铜箔并使用接地或电源平面以降低结-环境热阻；
- 若工作电流接近额定整流电流或环境温度较高，应进行降额使用或选择散热更好的封装/器件。
六、使用建议与注意事项
- 在应用中应避免长时间接近 Ifsm 或 Pd 极限，短时浪涌可承受 500 mA，但需考虑封装热滞与重复应力；
- 高频开关环境下应注意反向恢复造成的电磁干扰，配合适当的阻尼网络或 RC 抑制措施；
- 对于高压阻断场合，注意沿面爬电与 PCB 间距，保证可靠耐压；
- 推荐在设计阶段参考 CJ 官方器件数据手册，核实典型曲线、最大额定值及封装引脚定义以确保正确接线与可靠性。
综上，MMBD914 以其低 Vf、100 V 阻断和 4 ns 快速恢复等特性，适合空间受限且需高速开关或小信号整流的电子系统。
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