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CJ CJL3407
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- CJ CJL3407
- Type
- CJ
- Minimum package
- 3000
Technical parameters
- Electronic Component
- CJ
- Electronic Component
- CJL3407
- Electronic Component
- 1
- Package
- SOT-23-6L
- Electronic Component
- 1 P
- Electronic Component
- MOSFET
- Electronic Component
- 0.045g
- Electronic Component
- 1
- Electronic Component
- BM0263482503
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 350mW
- Electronic Component
- 3000
- Voltage(Vdss)
- 30V
- Capacitor(Ciss)
- 700pF
- Resistor(RDS(on))
- 60mΩ@10V
- Voltage(Vgs(th))
- 1V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
CJL3407 R7（P沟道 MOSFET）产品概述
一、产品简介
CJL3407 R7 为江苏长电（CJ）推出的一款 P 沟道场效应管，封装为 SOT-23-6L，适用于小功率高侧开关与功率管理场景。器件耐压 30V，单片件数：1 个 P 沟道，设计注重体积小、开关性能与封装热性能的平衡。
二、主要参数
- 漏-源电压 Vdss：30V
- 连续漏极电流 Id：4.1A
- 导通电阻 RDS(on)：60mΩ @ 10V（器件资料以 VGS=±10V 条件测得，P 沟道通常以 VGS=-10V 表示）
- 耗散功率 Pd：350mW
- 阈值电压 Vgs(th)：1V
- 输入电容 Ciss：700pF；反向传输电容 Crss：75pF
- 工作温度范围：-55℃ ~ +150℃
- 封装：SOT-23-6L
三、主要特性与优势
- 低导通电阻（60mΩ 级）可在中小电流范围内降低导通损耗，适合便携与车载低压电源管理。
- 较宽的工作温度范围适用于工业级环境。
- 中等输入电容（Ciss 700pF）在驱动功率与开关速度间取得平衡，便于门极驱动设计，减少驱动损耗。
- SOT-23-6L 小封装有利于高密度 PCB 布局与自动化贴装。
四、典型应用
- 电池供电设备的高侧开关与反接保护
- 便携设备电源切换与负载控制
- 低功率 DC-DC 转换器的同步开关（作为高侧器件）
- 工业控制与信号隔离的电源管理模块
五、封装与热管理建议
SOT-23-6L 封装热阻较大，额定 Pd=350mW 在无外部散热时受限明显。建议：
- 在 PCB 设计中增加散热铜箔、热填充和过孔以降低结温；
- 在靠近器件处尽量减小回流电路环路面积以减少寄生电感；
- 依据实际环境温度对耗散能力进行结温/环境温度降额。
六、使用注意事项
- P 沟道器件的栅源电压方向与 N 沟道相反，门极驱动需注意极性与驱动幅值；
- 若工作在开关频率较高场合，应关注 Ciss/Crss 带来的开关损耗与布局耦合；
- 在设计中留出适当的安全裕量，避免在最高额定电流与最高结温同时长期工作。
总体而言，CJL3407 R7 在 30V 级、几安培范围内提供了体积小、性能均衡的 P 沟道解决方案，适合对封装尺寸与电源管理有较高集成度要求的应用。
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