WMSIC Electronic Components

CJ S1ML

ModelS1ML
PackageSOD-123FL
BrandCJ
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Date code within 2 years

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
CJ S1ML
Type
CJ
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
CJ
Electronic Component
S1ML
Electronic Component
1
Package
SOD-123FL
Electronic Component
General Purpose Diode
Electronic Component
0.043g
Electronic Component
1
Electronic Component
BM0226369908
Current
1A
Diode
Electronic Component
Current(Ir)
10uA@1kV
(Vf)
1V@1A
Electronic Component
55℃~+150℃
Electronic Component
Electronic Component
Electronic Component
3000

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

S1ML — 通用高压整流二极管产品概述

S1ML 是 CJ(江苏长电/长晶)推出的一款独立式通用整流二极管,采用 SOD-123FL 小型贴片封装,面向需要高耐压和中等电流整流能力的电源与保护应用场景。本产品在高电压承受能力与小体积封装之间提供了良好的平衡,适用于开关电源、适配器、充电器以及工业控制和高压保护电路等。

一、主要特性

  • 直流整流电流(IF):1 A(连续)
  • 非重复峰值浪涌电流(IFSM):30 A(单次、半正弦波)
  • 直流反向耐压(VR):1000 V
  • 正向压降(VF):典型 1.0 V @ IF = 1 A
  • 反向漏电流(IR):典型 10 μA @ VR = 1000 V
  • 工作结温范围(Tj):-55 ℃ ~ +150 ℃
  • 封装:SOD-123FL(贴片独立式)
  • 品牌:CJ(江苏长电/长晶)

二、典型电气性能与意义

  • 高耐压(1 kV):支持中高压电源整流、反向保护和高压检测回路。适用于输入电压较高或有大幅电压波动的应用场合。
  • 低正向压降(1.0 V @1 A):在1 A工作电流下保持较低的功耗(Pd ≈ 1 W),降低整流损耗,对提高效率和减小发热有利。
  • 低反向漏电(10 μA @1 kV):在高压反向条件下保持较低的泄漏电流,便于高阻抗回路和测量电路中使用,减少误动作风险。
  • 良好冲击承受能力(IFSM 30 A):可承受短时间的开机冲击或浪涌电流,但不适合重复大幅浪涌,需遵循器件规格中的浪涌曲线和应用限制。

三、封装与散热

SOD-123FL 是一种小型扁平贴片封装,适合自动贴装与回流焊工艺,具有以下优势:

  • 占板面积小、引脚热阻较传统小型封装更低,适合密集布局的电路板。
  • 需通过 PCB 铜箔和接地/电源平面扩散热量,推荐在封装下方和引脚附近增加铜箔面积或使用热过孔以提高散热能力。
  • 在高环境温度或连续1 A工作条件下,应参考具体的热阻与结-周围环境散热能力进行功率与温升评估,并考虑适当的电流降额以保证长期可靠性。

四、典型应用场景

  • 开关电源(SMPS)输出或整流回路(需验证反向恢复特性)
  • 高频/低频适配器与充电器的高压整流
  • 工业电源、测控设备中的高压保护与整流
  • 浪涌保护策略中的钳位与限流(结合适当的抑制元件)
  • HV 测量信号整流与电压监测电路

五、设计与使用注意事项

  • 工作电流与散热:器件标称连续整流电流为1 A,但实际应用中请根据 PCB 散热条件、环境温度及允许的结温上限(Tj ≤ +150 ℃)进行电流降额。若长期以接近1 A工作,建议增大铜箔面积或使用夹层散热设计。
  • 浪涌与瞬态:IFSM = 30 A 为单次非重复峰值(通常半正弦波测试);重复性或长时间浪涌会缩短器件寿命,应在系统中加入合适的浪涌限制或软启动电路。
  • 反向恢复与开关频率:S1ML 为通用型整流二极管,若应用于高频开关电源,请参照详细数据手册确认反向恢复时间(trr)和相关损耗,以判断是否需要使用快恢复或肖特基替代器件。
  • PCB 布局:建议在器件焊盘处增加铜量并提供热过孔,以利热量向内层或底层扩散。确保走线短、回流路径低阻以减少寄生感性和电压尖峰。

六、可靠性与测试建议

  • 建议按实际应用进行热循环、温升试验以及电气过载/浪涌测试,以验证在目标环境下的长期可靠性。
  • 对高压应用,建议进行 EMI/ESD 和绝缘耐压测试,确保系统安全裕度。

七、采购与替代

S1ML(CJ 长电/长晶,SOD-123FL 封装)为性价比高的通用高压整流选型。选购时请向供应商索取完整规格书以确认所有时序、热阻与可靠性数据。若需更低正向压降或更快恢复特性,可在选择阶段比较肖特基或快恢复整流器件作为替代。

如需针对具体电路(如开关电源整流、浪涌吸收电路)优化元件选型与 PCB 布局方案,可以提供应用电路与工作条件,我可协助进行更精确的选型与热设计建议。

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