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CJ CJU50N06A
Configuration
1 options
Configuration
Date code within 2 years
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- CJ CJU50N06A
- Type
- CJ
- Minimum package
- 2500
Technical parameters
- Electronic Component
- CJ
- Electronic Component
- CJU50N06A
- Electronic Component
- 1
- Package
- TO-252-2L
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 0.34g
- Electronic Component
- 1
- Electronic Component
- BM0229991274
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 75W
- Electronic Component
- 2500
- Voltage(Vdss)
- 60V
- Capacitor(Ciss)
- 3.4nF
- Output Capacitor(Coss)
- 240pF
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
CJU50N06A 产品概述
一、产品简介
CJU50N06A 是 CJ（江苏长电/长晶）推出的一款 N 沟道功率 MOSFET，封装为 TO-252-2L（DPAK）。器件额定漏源电压为 60V，连续漏极电流可达 50A，适用于中低压高电流场合的开关与功率控制。
二、主要参数
- 类型：N沟道 MOSFET
- 漏-源电压 Vdss：60V
- 连续漏极电流 Id：50A
- 导通电阻 RDS(on)：25mΩ @ Vgs=4.5V
- 耗散功率 Pd：75W（视封装和散热条件而定）
- 阈值电压 Vgs(th)：2.5V @ 250µA
- 总栅极电荷 Qg：56nC @ 10V
- 输入电容 Ciss：3.4nF；输出电容 Coss：240pF；反向传输电容 Crss：220pF
- 工作温度范围：-55℃ ~ +150℃
- 封装：TO-252-2L
三、关键性能与特点
- 低导通电阻（25mΩ@4.5V），在 5V 驱动条件下具有良好导通性能，适合低压驱动系统。
- 较高的额定电流（50A）与较大的耗散能力（75W），在良好散热下可满足较高功率需求。
- 较大的栅极电荷（56nC@10V）表明开关时需较大驱动电流，快速切换时应选配低阻驱动器或在栅极串联阻抗做权衡。
- Crss 为 220pF，需关注米勒效应对开关过渡的影响，尤其在高 dV/dt 场景下。
四、典型应用
- DC-DC 转换器、同步整流
- 直流电机驱动、开关电源（SMPS）
- 负载开关、电池管理与逆变接口（中低压）
- 汽车电子和工业控制（需考虑浪涌与瞬态抑制）
五、设计与使用建议
- 驱动：推荐使用能够提供足够峰值电流的栅极驱动器以快速充放 Qg，若驱动能力有限可适当增加栅阻以防止振铃与过冲。
- 开关损耗：考虑 Qg 与 Coss 带来的能量损耗，提升效率时可通过降低开关频率或优化驱动速度权衡。
- 保护：对感性负载应配置 TVS、RC 吸收或斩波电路以抑制瞬态过压。
- PCB 布局：尽量缩短栅极、漏极与源极走线，采用宽铜箔和多层散热过孔来增强散热，TO-252 底部焊盘应与大面积铜箔热垫相连。
六、封装与热管理
TO-252-2L（DPAK）适合表面贴装，需保证底部热焊盘与 PCB 大面积铜箔良好热接触。器件标称 Pd 在实际使用中受 PCB 散热面积与环境影响较大，推荐在高功率工况下使用散热基板或加大铜箔面积并辅以风冷。
七、可靠性与注意事项
- 栅极对静电敏感，搬运与焊接过程中注意 ESD 防护。
- 在高温或长时间高应力工作下，关注热循环与包封应力，按可靠性标准设计余量。
- 规格参数以器件规格书为准，实际设计时请参考厂商提供的详细特性曲线与封装图纸。
八、总结
CJU50N06A 在 60V/50A 级别上提供了低 RDS(on) 与较高耗散能力，适合多种开关电源与功率控制场景。设计时应注意栅极驱动匹配、散热布局与瞬态保护，以发挥器件的性能与可靠性。
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