WMSIC Electronic Components

CJ SBDD20200CT

ModelSBDD20200CT
PackageTO-252-2
BrandCJ
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
CJ SBDD20200CT
Type
CJ
Minimum package
2500 编带

Technical parameters

Electronic Component
Electronic Component
Electronic Component
CJ
Electronic Component
SBDD20200CT
Electronic Component
1
Package
TO-252-2
Electronic Component
Schottky Diode
Electronic Component
0.481g
Electronic Component
1
Electronic Component
BM0227661072
Current
20A
Diode
1
Current(Ir)
2uA@200V
(Vf)
860mV@10A
Electronic Component
Electronic Component
Electronic Component
2500
Voltage Rating(Vr)
200V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

SBDD20200CT 肖特基二极管 产品概述

一、产品概述

SBDD20200CT 是江苏长电/长晶(CJ)生产的一款高压肖特基整流二极管,双芯片封装为1对共阴极结构,适用于大电流、高压情形下的整流与保护应用。器件采用 TO-252-2(DPAK)表面贴装封装,兼顾功率散热与板级组装便利性,适合模块化电源、逆变与工业驱动方向的批量生产使用。

二、主要规格与电气参数

  • 器件类型:肖特基二极管,1对共阴极
  • 正向压降:Vf = 860 mV @ If = 10 A(标称条件)
  • 直流反向耐压:Vr = 200 V
  • 平均整流电流:20 A(连续)
  • 反向漏电流:Ir = 2 μA @ Vr = 200 V
  • 非重复峰值浪涌电流:Ifsm = 150 A

以上参数表明该器件在200 V 级别下能承受较高正向电流,并且具有较小的反向漏电,可用于要求高压耐受与较大脉冲能力的场合。

三、封装与热性能

SBDD20200CT 采用 TO-252-2(DPAK)封装,适合回流焊贴装,具有较好的焊盘面积便于热量传导。由于器件额定整流电流达到 20 A,实际PCB设计时应配合足够铜厚与热铜铺设、通过热孔或散热片加强散热,以降低结温并保证长期可靠性。具体热阻与结温-环境的关系请参考器件完整数据表进行热设计与降额。

四、主要特点与优势

  • 高电压耐受:200 V 反向电压等级适合工业电源与中高压整流应用。
  • 大电流能力:20 A 连续整流与 150 A 峰值浪涌,满足启动/冲击电流需求。
  • 低反向漏电:2 μA(@200 V)保证在高压下静态功耗低,适合漏电敏感场合。
  • 共阴极组合:便于半桥整流、双路选择或对称输出的电路实现。
  • 快速响应:肖特基结构本身具有低反向恢复特性,减少开关损耗与电磁干扰(与传统快恢复二极管相比具有优势)。

五、典型应用场景

  • 开关电源输出与整流滤波(高压侧或副边整流)
  • DC-DC 变换器/降压模块的续流与整流元件
  • 电机驱动、逆变器的自由轮回路与保护电路
  • 电源反接保护、OR-ing 电路与浪涌吸收场合
  • 工业、电信与消费类需要高压高流整流的电源模块

六、使用建议与注意事项

  • 建议在 PCB 布局中为 DPAK 器件提供充足的散热铜箔,必要时并联多个器件或增加导热垫与散热片。
  • 正向压降随温度与电流升高而上升,设计时应考虑结温对 Vf 的影响并做功率损耗评估。
  • 高频开关应用时应考虑与栅极/开关瞬态匹配,保持合理的回路阻抗以降低振荡与尖峰。
  • 若需并联使用多只器件以提升电流能力,请关注电流均流与热失配问题,尽量保持一致焊接与散热条件。

七、可靠性与选型建议

在选型时应结合系统最大工作电压、峰值浪涌需求与结温范围做热降额计算,并建议参考 CJ 提供的完整数据表与封装机械图以确认焊盘尺寸与可靠性。对于要求更低正向压降或更高电压的应用,可对比其他型号或咨询供应商获取备选方案。若关注长期寿命与耐环境能力,请确认器件的温度循环、湿热与冲击试验数据。

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