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CJ CJAC150N03A
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- CJ CJAC150N03A
- Type
- CJ
- Minimum package
- 5000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- CJ
- Electronic Component
- CJAC150N03A
- Electronic Component
- 1
- Package
- PDFNWB-8L-EP(5x6)
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 0.19g
- Electronic Component
- 1
- Electronic Component
- BM0263482248
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 130W
- Electronic Component
- Electronic Component
- Electronic Component
- 5000
- Voltage(Vdss)
- 30V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
CJAC150N03A 产品概述
一、概述
CJAC150N03A 是一款高电流、低导通损耗的 N 沟道功率 MOSFET，额定 Vdss=30V、连续漏极电流 Id=150A，典型导通电阻 RDS(on)=2.7mΩ（Vgs=4.5V），耗散功率 Pd=130W。封装为 PDFNWB-8L-EP (5×6)，适合对功率密度和热性能有较高要求的低压高电流场合。
二、主要电气参数
- 漏源耐压：30V
- 连续漏极电流：150A
- 导通电阻：2.7mΩ @ Vgs=4.5V（逻辑电平友好）
- 阈值电压：Vgs(th)=2.5V（导通起始）
- 总栅电荷：Qg=82nC @10V（需要较大驱动电流）
- 输入/输出/反向传输电容：Ciss≈20nF，Coss≈1.8nF，Crss≈1.5nF
- 工作温度：-55℃ ~ +150℃
三、特点与优势
- 低 RDS(on) 实现极低导通损耗，适合大电流直流负载和同步整流。
- 在 4.5V 驱动下仍能保持低电阻，利于较低电压门极驱动方案。
- 较高的功率耗散能力和 PDFN 带底部散热垫封装，有利于 PCB 散热设计与热传导。
- 中等偏高的栅电荷与输入电容提示该器件在高频开关时需要较强的驱动能力。
四、典型应用
- 同步整流与降压（Buck）转换器
- 电池管理、车载电源、DC-DC 电源模块
- 马达驱动、功率开关与负载切换
- 需要低导通损耗的高电流低压功率系统
五、选型与使用建议
- 驱动：Qg=82nC@10V 表明开启/关断时峰值栅极电流较大，建议选用能够提供充放电峰值电流的门极驱动器，并在门极串联小阻尼电阻以抑制振铃。
- 散热：尽管 Pd=130W，但实际可用功率受 PCB 散热和环境限制，须通过加厚铜箔、热盲孔和底部焊盘多点过孔将热量引出。
- 布局：尽量缩短漏极—源极回流路径和门极走线，门、漏、源走线分别置于最优位置以降低寄生电感。底部大焊盘与多层铜层连接提高热阻抗性能。
- 保护：高电流切换容易产生过冲与振铃，必要时考虑 RC 或吸收网络、TVS 保护以及合适的电流保护算法。
- 资料核对：出于安全和可靠性考虑，请在设计前查阅完整版数据手册以确认 Vgs 绝对最大值、瞬态参数和热阻等详细额定值。
该器件在需兼顾低导通损耗与高电流能力的场合表现优异，结合合理的驱动与热设计，可在电源管理和功率转换系统中发挥良好效果。
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