WMSIC Electronic Components

CJ SBDD2045CT

ModelSBDD2045CT
PackageTO-252-2L
BrandCJ
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
CJ SBDD2045CT
Type
CJ
Minimum package
2500 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
CJ
Electronic Component
SBDD2045CT
Electronic Component
1
Package
TO-252-2L
Electronic Component
Schottky Diode
Electronic Component
0.452g
Electronic Component
1
Electronic Component
BM0226365752
Current
20A
Diode
1
Current(Ir)
10uA@45V
(Vf)
590mV@10A
Electronic Component
Electronic Component
Electronic Component
2500
Voltage Rating(Vr)
45V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

SBDD2045CT 产品概述

一、产品简介

SBDD2045CT 是 CJ(江苏长电/长晶)推出的一款双肖特基二极管,采用 1 对共阴极(双芯片阴极并联)配置,集低正向压降与高浪涌能力于一体,封装为 TO-252-2L(俗称 DPAK)。该器件专为高效率开关电源、整流和反向保护场合设计,适用于需要在较高直流电流下保持低导通功耗的应用场景。

二、主要电气参数(关键数据)

  • 配置:1 对共阴极(双肖特基,阴极共连)
  • 正向压降:Vf = 590 mV @ If = 10 A
  • 整流电流(平均):Io = 20 A(封装与散热条件相关)
  • 非重复峰值浪涌电流:Ifsm = 150 A(单次峰值)
  • 直流反向耐压:Vr = 45 V
  • 反向电流:Ir = 10 μA @ Vr = 45 V
  • 封装:TO-252-2L(DPAK 表面贴装)

以上参数为器件典型或规定值,实际应用中需结合工作温度、散热条件和 PCB 布局进行合适的降额设计。

三、主要特性与优势

  • 低正向压降:10 A 条件下 Vf 约 0.59 V,显著降低导通损耗,提高电源转换效率。
  • 快速开关、无显著反向恢复:肖特基结构使开关损耗和 EMI 低于普通 PN 二极管,适合高频整流和同步整流替代。
  • 良好浪涌能力:Ifsm = 150 A,可承受开机或异常条件下的短时大电流冲击。
  • 低反向漏电:在额定反向电压下 Ir 仅 10 μA,可降低静态损耗与漏电影响,适合高效率与低待机功耗设计。
  • TO-252 封装:便于 PCB 表面贴装、热传导效率较好,适合中大电流应用。

四、典型应用场景

  • 开关电源输出整流(SMPS 输出二极管)
  • DC-DC 降压/升压转换器的续流/钳位二极管
  • 汽车电子与电源管理(符合 45 V 反向耐压的低压系统)
  • 电池充放电保护、UPS 与逆变器等需要大电流整流的场合
  • 太阳能逆变/MPPT 电路中低压侧整流与保护

五、封装与热管理建议

  • 封装为 TO-252-2L(DPAK),背面大焊盘用于传导热量至 PCB 铜箔,实际连续平均电流能力受 PCB 散热面积和铜厚影响显著。
  • 推荐在 PCB 上使用大面积散热铜箔和多层板与散热过孔(thermal vias)以提升热传导,必要时配合外置散热器或强制风冷。
  • 在靠近开关器件或功率轨的布局中,尽量缩短高电流走线并加宽走线,减小寄生电感,降低电压尖峰与 EMI。
  • 对于长期高电流工作,建议进行热仿真或实际温升测试,并按照器件结温限制进行电流降额,保证可靠性。

六、使用注意事项

  • 尽量避免超出 Ifsm 的重复浪涌操作;Ifsm 为非重复峰值浪涌电流,适用于单次冲击。
  • 在高温、高电流工况下,反向漏电和正向压降会随温度上升而变化,应留有足够的安全裕量。
  • 做波形测量时注意测试引线电感与布局带来的误差,肖特基器件对测试夹具和布局较为敏感。
  • 焊接时遵循封装热搅动限制,使用建议的回流曲线并注意避免过长时间高温暴露以防损伤。

七、购买与质量保证

SBDD2045CT 由 CJ(江苏长电/长晶)生产,品牌具备成熟的半导体封装与可靠性验证能力。购买时建议通过正规渠道获取带批号和质保的产品,并在设计阶段索取数据手册与可靠性报告以便进行整机可靠性评估。

八、总结

SBDD2045CT 是一款针对中大电流整流及高效率电源应用优化的双肖特基二极管,凭借 0.59 V(@10 A)低正向压降、150 A 峰值浪涌能力与 45 V 的反向耐压,能在多种电源和保护场合提供良好的性能表现。合理的 PCB 散热与布局是该器件发挥长期稳定性能的关键。若需更详细的电参数、SOA 曲线或封装引脚图,请参考厂家正式数据手册或联系 CJ 技术支持获取样品与测试资料。

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