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CBI S8550
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- CBI S8550
- Type
- CBI
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- CBI
- Electronic Component
- S8550
- Electronic Component
- 1
- Package
- SOT-523
- Electronic Component
- 1 PNP
- Electronic Component
- Transistor(BJT)
- Electronic Component
- 0.03g
- Electronic Component
- 1
- Electronic Component
- BM0228585469
- Transistor Type
- PNP
- Frequency(f T)
- 150MHz
- Power Dissipation(Pd)
- 200mW
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Collector Current(Ic)
- 500mA
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
S8550 产品概述
一、产品简介
S8550 为 CBI(创基) 出品的低压大电流 PNP 双极型晶体管，面向小信号放大与开关驱动场合。器件采用超小型 SOT-523 封装，适合高密度表面贴装电路，兼顾体积与性能，适用于便携设备、音频前级及各种驱动电路。
二、主要规格
- 晶体管类型：PNP
- 集电极电流（Ic）：最大 500mA
- 集—射极击穿电压（Vceo）：25V
- 功耗耗散（Pd）：200mW
- 直流电流增益（hFE）：典型 120（条件：Ic=50mA，Vce=1V）
- 特征频率（fT）：150MHz（典型）
- 集电极泄漏电流（Icbo）：100nA（典型）
- 集—射极饱和电压（VCE(sat)）：600mV（条件：Ic=500mA，Ib=50mA）
- 发—基击穿电压（Vebo）：5V
- 封装：SOT-523
三、特性与优势
- 高增益：在中等电流点（50mA）下 hFE≈120，便于实现小信号放大与高增益设计。
- 频率响应好：fT≈150MHz，适合高频小信号放大与脉冲驱动应用。
- 低泄漏：Icbo≈100nA，适合偏置稳定性要求高的电路。
- 小型化封装：SOT-523 体积小，利于高密度装板和便携设备应用。
- 驱动能力：最高 Ic 可达 500mA，可作为低压功率开关或驱动器使用，但需注意封装功耗限制。
四、典型应用场景
- 小信号放大器与前置放大电路（音频、射频前端）
- TTL/CMOS 接口驱动、低压逻辑开关
- 小电流继电器或电磁元件驱动（注意功耗和散热）
- 便携式消费电子、无线通信模块、传感器前端电路
五、封装与应用建议
- 由于 Pd=200mW，SOT-523 散热能力有限，PCB 设计时应增大量铜箔面积并采用热过孔以降低结温。
- 在高电流工作点（接近 500mA）时，需保证足够的基极驱动电流（示例条件 Ib≈50mA 对应 VCE(sat)≈600mV），并确认元件温升与长期可靠性。
- 发—基击穿电压仅 5V，注意基极电压不要超过额定值，防止损坏。
- 选型时结合实际工作电流、环境温度与散热条件，必要时考虑更高功耗封装或并联使用。
本产品适合在体积受限且对频率、增益有一定要求的电路中使用，合理的电路与热设计可发挥其最佳性能。若需样品或详细参数曲线（温度特性、极限曲线等），建议联系厂商获取完整数据手册。
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