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CBI 1SS355WT
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- CBI 1SS355WT
- Type
- CBI
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- CBI
- Electronic Component
- 1SS355WT
- Electronic Component
- 1
- Package
- SOD-523
- Electronic Component
- Switch Diode
- Electronic Component
- 0.022g
- Electronic Component
- 1
- Electronic Component
- BM0230804639
- Current
- 100mA
- Diode
- Electronic Component
- Current(Ir)
- 100nA@80V
- (Vf)
- 1.2V@100mA
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Voltage Rating(Vr)
- 80V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
1SS355WT 产品概述
一、主要特性
1SS355WT 为创基（CBI）出品的独立式开关二极管，采用超小型 SOD-523 封装，适用于空间受限的表贴场合。主要电气参数如下：
- 正向压降 Vf = 1.2V @ IF = 100mA
- 直流整流电流 IF(AV) = 100mA
- 非重复峰值浪涌电流 IFSM = 500mA（一次性冲击）
- 直流反向耐压 VR = 80V
- 反向漏电流 IR = 100nA @ VR = 80V
- 反向恢复时间 Trr ≈ 4ns（高速度恢复特性）
二、电气性能解读
该器件为小信号高速开关/整流二极管，1.2V 的正向压降在 100mA 工作点下表现稳定，适合作为低到中等电流的开关或检测元件。80V 的反向耐压使其可在较高阻断电压场合使用，而仅 100nA 的漏电流有利于低功耗和高阻抗电路。4ns 的反向恢复时间表明在高频开关环境下开关损耗和反向恢复相关干扰较低，但仍需结合电路布局考虑抑制尖峰和振铃。
三、典型应用
- 高速开关电路、逻辑信号整形与隔离
- 小电流整流、峰值检波与包络检波器
- 钳位、电平移位与过压保护（低功率）
- 便携设备、通信模块和消费电子中空间受限的应用场合
四、封装与 PCB 布局建议
SOD-523 为极小型表贴封装，焊盘与过孔面积受限，散热能力有限：
- 对于接近额定整流电流（100mA）时，采用较短、较宽的铜箔和适当的散热填充以降低结温。
- 若存在较大脉冲（靠近 IFSM），应在器件附近增加焊盘面积或热铜层以分散能量。
- 布局上尽量缩短与关键阻抗敏感节点（如驱动器、场效应管门极）的连线，添加 RC 阻尼/吸收网络以抑制反向恢复引起的噪声。
五、可靠性与使用注意
- 连续工作电流不可超过 100mA；浪涌电流仅限非重复性冲击，避免重复超过规格。
- 反向漏流会随温度显著上升，设计时应考虑温度去评级（derating）。
- 在开关快速转换场合关注反向恢复引起的瞬态过压，必要时配合吸收网络或限流措施。
- 生产与回流焊工艺应参照制造商推荐曲线，避免过热导致封装或锡焊失效。
六、采购与替代
产品标识：1SS355WT，品牌：CBI（创基），封装：SOD-523。采购时请查阅完整数据资料以获取电气表、热参数与包装（卷带）信息。若需要更高电流或更低正向压降，可在同类封装中选用规格不同的开关/肖特基二极管作为替代，并验证反向恢复与漏电特性是否满足系统要求。
若需，我可以根据您的具体电路工作电流、开关频率与温升条件，给出更详细的布局与去评级建议。
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