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CRMICRO CRSD130N10L2
Configuration
1 options
Configuration
23+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- CRMICRO CRSD130N10L2
- Type
- CRMICRO
- Minimum package
- 2500 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- CRMICRO
- Electronic Component
- CRSD130N10L2
- Electronic Component
- 1
- Package
- TO-252
- Electronic Component
- 1 N
- Electronic Component
- MOSFET
- Electronic Component
- 0.457g
- Electronic Component
- 1
- Electronic Component
- BM0226507878
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 101.2W
- Electronic Component
- Electronic Component
- Electronic Component
- 2500
- Voltage(Vdss)
- 100V
- Capacitor(Ciss)
- 2.427nF
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
CRSD130N10L2 产品概述
一、产品简介
CRSD130N10L2 是华润微（CRMICRO）推出的一款100V 片上单N沟道功率场效应管，采用TO-252（DPAK）表面贴装封装，设计用于高电流、高效率的开关应用。器件额定工作温度范围宽（-55℃至+150℃），适合工业和车规等严苛环境。
二、主要电气参数
- 漏源电压 Vdss：100V
- 连续漏极电流 Id：65A
- 导通电阻 RDS(on)：11 mΩ @ Vgs = 10V, Id = 50A
- 阈值电压 Vgs(th)：1.4V
- 栅极总电荷 Qg：42 nC @ Vgs = 10V
- 输入电容 Ciss：2.427 nF @ 50V
- 反向传输电容 Crss：44 pF @ 50V
- 功率耗散 Pd：101.2 W（参考值，实际受封装与PCB散热影响）
三、驱动与开关性能建议
- 为获得标称低 RDS(on)，建议栅极驱动电压为 10–12V；尽管 Vgs(th) 为 1.4V，但在逻辑电平驱动（5V）下的导通电阻会增大。
- Qg = 42 nC 表明器件在高开关频率时对栅极驱动器有较大瞬态要求。驱动器平均功耗可按 Pdrive = Qg·Vdrive·fs 估算；例如在 200 kHz、Vdrive=10V 时大约为 0.084 W。为控制开关过渡，建议串联栅阻 2–10 Ω，必要时并联米勒钳位或RC缓冲。
- Crss 相对较小，有利于减小米勒效应，但 Ciss 较大会令 dV/dt 对驱动能力敏感。
四、热管理与封装注意
- TO-252 为中小功率表面贴装封装，Pd 标称值需结合 PCB 散热计算。实际散热依赖于焊盘面积、背铜和过孔。
- 建议在电源回路处使用大面积铜箔、多层散热层和热过孔，必要时与外部散热体或散热片配合使用，以保证结温在安全范围内并延长寿命。
五、典型应用
- 100V 级同步降压芯片中的功率开关
- 开关电源（SMPS）、车载 DC-DC、车灯驱动
- 马达驱动、功率转换和功率因数校正（PFC）前端模块
- 需要高导通电流与中等开关频率的应用场景
六、布局与可靠性建议
- 最小化电流回路环路面积，靠近电源电容与器件布置，降低寄生电感引起的振铃与过冲。
- 在高 dv/dt 场合注意布线与地回路，必要时增加栅源肖特基或瞬态抑制元件保护。
- 遵循焊接与回流工艺规范，避免超出器件温度极限。器件在高温工作时需充分考虑长期电迁移与热循环影响。
七、总结
CRSD130N10L2 以其 100V 电压等级、低至 11 mΩ 的导通电阻和较大的连续电流能力，适合对效率和导通损耗有较高要求的功率转换场合。选型时应综合考虑栅极驱动能力、开关频率与PCB散热设计，才能发挥该器件的最佳性能。
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