WMSIC Electronic Components

DIOTEC BC847A

ModelBC847A
PackageSOT-23
BrandDIOTEC
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 24+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
DIOTEC BC847A
Type
DIOTEC
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
DIOTEC
Electronic Component
BC847A
Electronic Component
1
Package
SOT-23
Electronic Component
1 NPN
Electronic Component
Transistor(BJT)
Electronic Component
0.027g
Electronic Component
1
Electronic Component
BM0227699740
Operating Temperature
55℃~+150℃
Transistor Type
NPN
Frequency(f T)
300MHz
Power Dissipation(Pd)
250mW
Electronic Component
Electronic Component
Electronic Component
3000

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

BC847A(DIOTEC)产品概述

一、产品简介

BC847A 是一款通用型 NPN 双极晶体管,DIOTEC(德欧泰克)品牌,采用 SOT-23 表面贴装封装。器件针对小信号放大与开关应用进行了优化,兼具高电流增益与较快的频率响应,适合便携式与空间受限的电子设备。

二、主要电气参数

  • 直流电流增益 hFE:800(典型值,Ic=2mA,VCE=5V)
  • 最大集电极电流 Ic:100mA
  • 集电极—射极击穿电压 VCEo:45V
  • 集射极截止电流 Icbo:5µA(典型,微弱漏电流)
  • 耗散功率 Pd:250mW(封装散热限制需注意)
  • 特征频率 fT:300MHz(高频性能优良)
  • 射基极击穿电压 Vebo:5V(注意反向基-射极电压限制)
  • 集电极饱和电压 VCE(sat):约200mV(典型,Ic=100mA,Ib=5mA)

三、性能特点与优势

  • 高电流增益:在低电流工作点(约2mA)下呈现高 hFE,便于实现高增益放大器或降低基极偏置电流。
  • 低饱和压降:VCE(sat) 低,适合要求低导通损耗的开关场合。
  • 宽温度范围:-55℃ ~ +150℃ 的工作温度适应工业级应用。
  • 良好高频特性:fT≈300MHz,适合高频小信号放大或驱动用途。
  • 小型表贴封装:SOT-23 占板面积小,适合高密度 PCB 布局。

四、典型应用场景

  • 小信号放大器(前置放大、差分放大等)
  • 电平转换与缓冲驱动(中低功率开关)
  • 模拟开关、驱动脉冲电路
  • 高频放大与射频前端(受限于功率与匹配条件)
  • 便携式及消费类电子设备中的通用放大/开关

五、设计与使用建议

  • 功耗与热管理:Pd=250mW 为器件耗散上限,SOT-23 散热能力有限,建议在连续工作时留有裕量,必要时降低集电极电流或采用 PCB 热铜区域散热。
  • 电流与增益平衡:高 hFE 在低电流时明显,随 Ic 增大增益会下降。若需稳定增益,应在电路中正确偏置并考虑温漂影响。
  • 饱和驱动设计:若用于开关导通,确保基极驱动电流足够(例如典型参数中 Ib≈5mA 对应 Ic 100mA 可达到低 VCE(sat))。
  • 极限电压保护:基-射极反向电压 Vebo≈5V,避免在电路中反向施加过高电压导致损坏;VCEo=45V,要保证开关或瞬态不会超过此值。
  • 漏电流注意:Icbo≈5µA 在高阻电路或高温时可能影响偏置精度,设计偏置网络时应考虑漏电流对静态点的影响。

六、封装与选型注意

SOT-23 表面贴装适合自动化生产与空间受限场合。选型时,应综合考量工作电流、功耗、频率需求及散热条件;若需要更大功率或更高电流能力,应考虑更大封装或功率型晶体管。购买时请确认供应商型号、批次与具体参数的一致性,并参考器件详尽数据手册以获取完整的极限值和典型性能曲线。

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