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DIOTEC 2N5551
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- DIOTEC 2N5551
- Type
- DIOTEC
- Minimum package
- 4000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- DIOTEC
- Electronic Component
- 2N5551
- Electronic Component
- 1
- Package
- TO-92
- Electronic Component
- 1 NPN
- Electronic Component
- Transistor(BJT)
- Electronic Component
- 0.328g
- Electronic Component
- 1
- Electronic Component
- BM0227699755
- Operating Temperature
- 55℃~+150℃
- Transistor Type
- NPN
- Frequency(f T)
- 300MHz
- Power Dissipation(Pd)
- 625mW
- Electronic Component
- Electronic Component
- Electronic Component
- 4000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
2N5551 产品概述
一、产品简介
2N5551 是一款高压 NPN 小信号晶体管，由 DIOTEC（德欧泰克）量产，常见封装为 TO‑92。器件面向需要较高集电极-发射极耐压、适中电流能力和良好频率响应的场合，适用于开关、放大与驱动等应用。器件数量：单颗（1个 NPN）。
二、电气特性亮点
- 直流电流增益 hFE：250（在 Ic=10mA、VCE=5V 时）；
- 特征频率 fT：300MHz，适合高频前级或宽带放大；
- 集电极-发射极击穿电压 VCEo：160V，耐压性能优秀；
- 额定集电极电流 Ic：600mA（注意为瞬态或最大值，持续工作需参照热设计）；
- 集电极耗散功率 Pd：625mW（TO‑92 封装受限于散热）；
- 集电极截止电流 Icbo：50nA（低漏电，便于高阻电路）；
- 射基极击穿电压 Vebo：6V；集电极饱和电压 VCE(sat)：约200mV；
- 工作结温范围：-55℃ ~ +150℃（Tj 标称）。
三、典型应用场景
- 小信号放大器：凭借较高 hFE 与 300MHz fT，可用作音频前级、VHF 前置放大；
- 开关驱动：VCEo=160V 与较低 VCE(sat) 使其适用于低功耗开关和驱动小型继电器、继电管；
- 通用电子电路：信号整形、电平转换与传感器前端等场合表现良好。
四、使用与设计注意事项
- 功耗与散热：TO‑92 封装 Pd=625mW，实际应用中应限制集电极电流与 VCE，以免超出结温；若长期较大电流工作，建议加散热或选用更大封装；
- 安全工作区（SOA）：尽量避免在高 VCE 与高 Ic 同时存在的工况，短脉冲允许更高电流，但需验证热循环寿命；
- 基极保护：Vebo=6V，基极—发射极反向电压敏感，避免超过此值；并考虑串联限流电阻以防止过流；
- 静电与安装：TO‑92 管脚细长，焊接时热量集中，建议快速焊接并注意防静电。
五、选型参考
当电路要求耐压高（≈160V）、增益中等偏高且体积小、成本低时，2N5551 是合适选择；若需更大持续功率或更高电流，考虑更大封装或功率晶体管；若重点是超低噪声或极高频率，则可比较专用低噪/射频晶体管参数后替换。
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