WMSIC Electronic Components

FOSAN US2M

ModelUS2M
PackageSMA
BrandFOSAN
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
FOSAN US2M
Type
FOSAN
Minimum package
5000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
FOSAN
Electronic Component
US2M
Electronic Component
1
Package
SMA
Electronic Component
Fast Recovery / High-Efficiency Diode
Electronic Component
0.12g
Electronic Component
1
Electronic Component
BM0264881611
Current
2A
Current(Ir)
5uA@1000V
(Vf)
1.85V@2A
Electronic Component
65℃~+150℃
Electronic Component
Electronic Component
Electronic Component
5000
Voltage Rating(Vr)
1kV

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

US2M 快恢复/高效率二极管(2A, SMA)产品概述

一、产品简介

US2M 是 FOSAN(富信)出品的一款高压快恢复整流二极管,额定整流电流为 2A,采用常见的 SMA 表面贴装封装。该器件兼顾了高耐压、低反向漏电和较短的反向恢复时间,适用于需要高效率与高电压耐受的电源与整流场合。

二、主要电气参数与特性

  • 正向压降 (Vf):1.85V @ 2A(低电阻、减小导通损耗)
  • 直流反向耐压 (Vr):1000V(1kV 高压级,适合高压回路)
  • 平均整流电流:2A
  • 非重复峰值浪涌电流 (Ifsm):60A(能够承受短时冲击电流)
  • 反向电流 (Ir):5µA @ 1000V(在高压下保持极低漏电)
  • 反向恢复时间 (Trr):70ns(属快恢复类别,有利于高频开关应用)
  • 工作结温范围:-65°C ~ +150°C(宽温度工作能力)

三、封装与机械特性

US2M 采用 SMA(DO-214AC)表面贴装封装,体积小、焊接可靠,适配自动贴片和回流焊工艺。SMA 封装在散热面积与可焊性之间取得平衡,便于在 PCB 上实现密集布局与散热设计。

四、性能优势与应用场景

  • 高耐压与低泄漏:1kV 耐压配合 5µA 的低反向电流,使其在高压整流、HV 供电模块和电源滤波中表现优异。
  • 快恢复特性:70ns 的反向恢复时间显著降低开关损耗与电磁干扰(EMI),适合开关电源(SMPS)、逆变器、太阳能逆变、功率因数校正(PFC)和高频整流应用。
  • 抗浪涌能力:60A 峰值浪涌电流保证了在冗余启动、负载突变或容性负载断续时的可靠性。
  • 宽温度适应:-65°C ~ +150°C 的结温范围适合工业级与电力电子环境。

五、热管理与可靠性建议

虽为 SMA 小封装,合理的 PCB 散热设计仍然必要。建议:

  • 在二极管焊盘下方和周边使用铜箔散热,必要时连通至内层散热平面。
  • 注意连续 2A 工作时的环境温度与结温上升,必要时评估热阻并留有安全裕度。
  • 遵守回流焊温度曲线与湿敏等级(如果供应商有特殊要求),以保证长期可靠性。

六、使用注意事项与选型建议

  • 若电路为高频开关应用(>100kHz),US2M 的 70ns Trr 能有效降低切换损耗,但在极高频或需极低恢复能量的场合可考虑更快恢复或复合型二极管。
  • 在需要更低正向压降以减少导通损耗的场景,可在允许的电压范围内考虑肖特基二极管,但肖特基通常耐压受限,不适合 1kV 应用。
  • 在封装和贴装过程中,遵循制造商的焊接说明,避免长时间超温或过度热循环。

七、典型电路与替代方案

典型用途包括高压整流桥、开关电源输出整流、高压退耦与箝位电路、逆变器的自由轮回路等。若需更高电流或更低 Vf,可选择更大封装或并联多只器件;若工作频率更高且电压要求较低,可考虑高压肖特基或超快恢复二极管作为替代。

总结:US2M(FOSAN)是一款面向高压、高效率整流的快恢复二极管,综合了 1kV 耐压、低漏电、70ns 快恢复与 2A 整流能力,适合工业电源、逆变与开关电源等需要高压和高效率的场合。选择时应结合散热设计与开关频率,确保长期稳定运行。

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