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FOSAN SS56C
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- FOSAN SS56C
- Type
- FOSAN
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- FOSAN
- Electronic Component
- SS56C
- Electronic Component
- 1
- Package
- SMC
- Electronic Component
- Schottky Diode
- Electronic Component
- 0.35g
- Electronic Component
- 1
- Electronic Component
- BM0264881633
- Current
- 5A
- Diode
- Electronic Component
- Current(Ir)
- 100uA@60V
- (Vf)
- 700mV@5A
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Voltage Rating(Vr)
- 60V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
SS56C 产品概述
一、产品简介
SS56C 是富信（FOSAN）出品的一款独立式肖特基整流二极管，封装为 SMC，额定整流电流 5A，最大反向耐压 60V。该器件在大电流整流场合具备较低的正向压降（典型 700mV@5A），适用于多种开关电源、整流和保护电路。
二、主要规格与特性
- 二极管类型：肖特基（Schottky）整流，独立式封装
- 正向压降：约 0.7V（在 5A 条件下）
- 额定整流电流：5A（连续）
- 直流反向耐压：60V（Vr）
- 反向漏电流：100µA @ 60V（常温）
- 封装：SMC（适合较高功率和散热需求的贴片封装）
三、电气参数解读
700mV@5A 的正向压降意味着在大电流条件下仍能保持较低的功耗，适合用于高效率要求的整流或续流路径。60V 的耐压范围覆盖大多数中低压电源应用；100µA 的反向漏电流在高温下会显著上升，设计时需考虑温度对漏电流的影响及对电路静态功耗的贡献。
四、封装与热特性
SMC 封装具备较大的散热铜面与可靠的机械强度，利于热量通过焊点和 PCB 散发。为保证长期稳定运行，应在 PCB 设计中增大焊盘面积、添加过孔导热并预留足够的走线宽度，以降低结温并保证额定电流下的性能。
五、典型应用
- 开关电源输出整流
- 电池充电器与电源管理模块
- 反向电流保护与续流二极管（freewheeling）
- 太阳能微逆变器、小型逆变与适配器电源
六、布局与使用建议
- 走短且宽的铜箔以降低导通损耗和结温；在高电流路径上使用多层铜/加焊锡工艺。
- 对于高频开关环境，靠近二极管端放置去耦电容以抑制尖峰电压和负载反冲。
- 注意极性标识，避免反向应力瞬间超过 Vr。
- 在热敏感设计中为二极管留出散热空间或添加散热铜箔／散热器。
七、可靠性与测试提醒
- 反向漏电流随温度升高成指数上升，需在目标工作温度下评估静态功耗。
- 大电流反复冲击或过温会影响结温循环寿命，建议按应用场景进行加速老化与热循环测试。
- 采购前核对富信官方完整数据手册，关注焊接工艺参数与封装尺寸公差。
八、结论与选型建议
SS56C（FOSAN，SMC 封装，5A/60V，0.7V@5A，Ir=100µA@60V）在功率整流与保护场景中提供了较好的导通损耗与散热能力。若应用对反向漏电流或封装空间有严格要求，应结合目标温度和实际电流做样品验证；若需更低漏电或更高耐压，可考虑替代型号或并联/并用散热方案以满足系统可靠性。
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