WMSIC Electronic Components

FOSAN MMBT5401

ModelMMBT5401
PackageSOT-23
BrandFOSAN
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
FOSAN MMBT5401
Type
FOSAN
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
FOSAN
Electronic Component
MMBT5401
Electronic Component
1
Package
SOT-23
Electronic Component
1 PNP
Electronic Component
Transistor(BJT)
Electronic Component
0.034g
Electronic Component
1
Electronic Component
BM0264881619
Transistor Type
PNP
Frequency(f T)
300MHz
Power Dissipation(Pd)
300mW
Electronic Component
Electronic Component
Electronic Component
3000
Collector Current(Ic)
500mA

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

MMBT5401 PNP型晶体管产品概述

一、产品基本信息

MMBT5401是FOSAN(富信)推出的PNP型高频通用晶体管,采用SOT-23小型表面贴装封装,背面焊锡规格为0.44(适配回流焊工艺,提升焊接可靠性)。该器件单只封装,直流电流增益(hFE)典型范围为100-200,在特定测试条件下(Ic=10mA、Vce=5V)可达到240,是兼顾放大与开关性能的经典分立器件,广泛应用于小型电子设备、电源管理等场景。

二、核心电气参数详解

1. 极限参数(安全工作边界)

  • 最大集电极电流(Ic):500mA,可满足中等功率信号的驱动需求(如小功率LED、继电器线圈);
  • 集射极击穿电压(Vceo):150V(基极开路),突破普通PNP管的电压限制,适用于高压信号场景;
  • 最大耗散功率(Pd):300mW(常温25℃),可稳定承载中等功率的持续工作;
  • 射基极击穿电压(Vebo):6V(集电极开路),避免反向偏置时器件损坏,保障电路安全。

2. 直流性能参数

  • 集电极截止电流(Icbo):50nA(发射极开路),低泄漏电流特性可显著降低电路噪声,适合微弱信号采集;
  • 集射极饱和电压(VCE(sat)):500mV(Ic=50mA、Ib=10mA),开关损耗小,响应速度快,适合高频次开关应用;
  • 直流电流增益(hFE):典型值100-200,峰值240(Ic=10mA、Vce=5V),放大能力强,可减少驱动级电流。

3. 高频性能参数

  • 特征频率(fT):300MHz,覆盖中频至高频信号范围,可用于音频放大、射频缓冲等场景。

三、封装与工艺特点

SOT-23封装尺寸仅约2.9×1.6×1.1mm,适配高密度PCB布局,可显著缩小终端产品体积(如智能穿戴、小型家电);背面0.44规格的焊锡设计,与回流焊工艺兼容性好,焊接后焊点可靠性高,减少虚焊风险。
FOSAN作为国内成熟的分立器件厂商,MMBT5401采用稳定的半导体工艺生产,器件一致性好,批次间参数波动小,可满足批量生产需求。

四、典型应用场景

  1. 低噪声放大电路:手机、蓝牙耳机的音频前置放大,低Icbo特性抑制噪声,提升音质清晰度;
  2. 开关控制电路:小型LED驱动、继电器线圈控制,低VCE(sat)降低开关损耗,延长负载寿命;
  3. 电源管理模块:线性稳压电源反馈回路、电池保护电路,150V的Vceo应对电压波动,保障电路稳定;
  4. 传感器接口电路:温度、压力传感器的信号放大,低泄漏电流准确采集微弱模拟信号;
  5. 高频辅助电路:FM收音机中频放大、射频信号缓冲级,300MHz的fT满足中频信号处理需求。

五、性能优势总结

  • 高压适配:150V的Vceo突破普通PNP管限制,适用于高压信号场景;
  • 低损耗开关:500mV饱和电压减少开关功耗,适合高频次应用;
  • 高放大能力:峰值hFE=240简化驱动电路设计,降低成本;
  • 低噪声特性:50nA截止电流适合微弱信号采集(如传感器);
  • 小型化设计:SOT-23封装适配便携式、小型化电子设备。

MMBT5401凭借均衡的性能参数与可靠的工艺,成为消费电子、工业控制等领域的常用PNP晶体管,可满足多数中等功率、高频次的电路需求。

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