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FOSAN ES2J
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- FOSAN ES2J
- Type
- FOSAN
- Minimum package
- 5000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- FOSAN
- Electronic Component
- ES2J
- Electronic Component
- 1
- Package
- SMA
- Electronic Component
- Fast Recovery / High-Efficiency Diode
- Electronic Component
- 0.12g
- Electronic Component
- 1
- Electronic Component
- BM0264886312
- Current
- 2A
- Current(Ir)
- 5uA@600V
- (Vf)
- 1.7V@2A
- Electronic Component
- 65℃~+150℃
- Electronic Component
- Electronic Component
- Electronic Component
- 5000
- Voltage Rating(Vr)
- 600V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
ES2J 快恢复/高效率二极管（FOSAN，SMA封装）产品概述
一、产品概述
ES2J 为 FOSAN（富信）推出的一款高速恢复、高效率整流二极管，SMA 封装，面向开关电源、整流桥、续流回路及高压直流应用场景。器件具有 600V 的直流反向耐压、2A 的连续整流能力以及较低的反向漏电流，兼顾开关性能与导通效率，适用于中等功率、高电压的应用需求。
二、主要参数
- 正向压降 Vf：1.7V @ 2A
- 直流反向耐压 Vr：600V
- 连续整流电流 If(AV)：2A（SMA 封装热阻限制）
- 反向电流 Ir：5μA @ 600V
- 反向恢复时间 Trr：35ns（典型值）
- 非重复峰值浪涌电流 Ifsm：60A
- 工作结温范围：-65℃ ~ +150℃
三、性能亮点
- 高耐压（600V）：适合高压整流和开关电源二次侧高压回路。
- 低漏电流（5μA）：在高压待机或低负载条件下有利于降低待机损耗。
- 快速恢复（Trr 35ns）：相比普通整流二极管能显著减少反向恢复导致的开关损耗与应力，提升转换效率。
- 良好浪涌承受力（Ifsm 60A）：能够承受开机或短时过载产生的浪涌电流。
四、典型应用
- 开关电源（SMPS）输出整流与续流二极管
- 功率因数校正（PFC）电路中高压整流
- 交流—直流整流桥（高压版本）
- 逆变器、伺服驱动等需兼顾高压与高速开关场景
五、布局与散热建议
- SMA 封装热阻限制连续 2A 的功率耗散，推荐合理 PCB 散热铜箔（加大焊盘、采用散热槽或加厚铜）以降低结温。
- 在高频开关应用中，注意减小回路电感、靠近开关点布局，以降低反向恢复产生的振铃与 EMI。
- 对于高浪涌场合，必要时结合软起动或限流电路以保护器件。
六、选型与注意事项
- 与肖特基二极管比较：ES2J 在高压下漏电更低且耐压更高，但正向压降高于低压肖特基，导通损耗需权衡。
- 反向恢复会带来开关损耗与 EMI，若工作频率极高或要求极低恢复尾，考虑更速或专用软恢复器件。
- 并联使用需谨慎，SMA 封装并联易受电流分配不均影响，必要时加小阻抗匹配。
- 工作温度上限 150℃，请按结温与环境温度进行功率和散热裕量设计。
总结：ES2J 在 600V/2A 级别提供了良好的平衡性能，适用于中高压整流与开关场合，是追求高压耐受、低漏电与较快恢复性能应用的实用选择。
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