WMSIC Electronic Components

FOSAN BC807-40 BC807

ModelBC807-40
PackageSOT-23
BrandFOSAN
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
FOSAN BC807-40
Type
FOSAN
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
FOSAN
Electronic Component
BC807-40
Electronic Component
1
Package
SOT-23
Electronic Component
Transistor(BJT)
Electronic Component
0.033g
Electronic Component
1
Electronic Component
BM0264886514
Transistor Type
PNP
Frequency(f T)
100MHz
Power Dissipation(Pd)
300mW
Electronic Component
Electronic Component
Electronic Component
3000
Collector Current(Ic)
500mA
Current (h FE)
600

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

BC807-40(SOT-23)产品概述

一、产品简介

BC807-40 是一款低功耗 PNP 小信号三极管,FOSAN(富信)生产,采用 SOT-23 封装。其主要面向低电压/中小电流的开关与放大应用,集电极最大电流 Ic 可达 500mA,集射极击穿电压 Vceo 45V,适用于便携式、消费电子和工业控制等领域。

二、主要特性

  • 晶体管类型:PNP
  • 最大集电极电流(Ic):500mA(受封装散热限制,请按实际工况降额使用)
  • 集射极击穿电压(Vceo):45V
  • 耗散功率(Pd):300mW(SOT-23封装,需注意 PCB 散热)
  • 直流电流增益(hFE):典型 600(高增益,见条件依赖)
  • 特征频率(fT):100MHz(小信号放大频率响应良好)
  • 集电极截止电流(Icbo):5μA(漏电小)
  • 集射极饱和电压(VCE(sat)):典型 700mV(饱和损耗需考虑)
  • 射基极击穿电压(Vebo):5V(基极-发射极电压受限)

三、电气规格要点(工程角度)

  • hFE 虽然标称很高,但随 Ic、温度变化显著。设计开关电路时不宜只按静态 hFE 计算饱和驱动,建议按强制β(10–50)进行基极驱动设计以保证饱和。
  • Pd 与 SOT-23 的热阻决定了实际可持续 Ic,理论 500mA 为极限脉冲值,长期工作电流通常需控制在较低水平(例如 <200–300mA,视 PCB 散热而定)。
  • Vebo=5V 提醒不要直接将基极与发射极之间施加过高电压,防止击穿。
  • Icbo 小,有利于高阻态下保持低漏电,但在高温下泄漏会上升,应在高温环境下留裕量。

四、典型应用

  • 低压高侧开关(需配合电平移位或 NPN 驱动器)
  • 小信号放大器(音频前级、传感器放大)
  • 反相器、模拟开关、负载断电控制
  • 高频小信号处理(fT≈100MHz 可满足部分 VHF 应用)

五、使用建议与注意事项

  • 高侧开关时:因 PNP 发射极通常接正电源,若发射电压高于 MCU 输出,不能直接用 MCU 拉低基极以驱动三极管,需用 NPN 级联或专用驱动器做电平转换。
  • 基极驱动:为确保饱和,按强制β取值(通常 10–50)计算所需基极电流;例如若 Ic = 100mA,取强制β=50,则 Ib ≈ 2mA。
  • 散热管理:SOT-23 封装 Pd=300mW,建议在 PCB 上使用过孔与接地/电源平面加铜厚进行散热,避免长时间大电流工作。
  • 封装与引脚:SOT-23 小封装便于表贴,但机械与焊接应注意过热和静电防护。具体引脚排列请以生产厂完整数据表为准。

六、选型与替代

BC807-40 以较高 hFE 与中等电压能力为特点,适合要求高增益且功率较低的场合。如需更高耗散或更大电流,应选用功率级封装(SOT-223、TO-92 等)或并联/替换为专用 MOSFET。购买与设计前,建议参考 FOSAN 的完整数据手册核对典型测试条件和极限参数。

总结:BC807-40 在小型化电路中以其高增益、良好频响和适中的耐压成为常用的 PNP 小信号元件,但在开关应用中需特别注意基极驱动方式和 SOT-23 的热限制。

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