WMSIC Electronic Components

FOSAN FSS2300M

ModelFSS2300M
PackageSOT-23
BrandFOSAN
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
FOSAN FSS2300M
Type
FOSAN
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
FOSAN
Electronic Component
FSS2300M
Electronic Component
1
Package
SOT-23
Electronic Component
1 N
Type
N
Electronic Component
MOSFET
Electronic Component
0.035g
Electronic Component
1
Electronic Component
BM0264886305
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
1W
Electronic Component
Electronic Component
Electronic Component
3000
Voltage(Vdss)
20V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

FSS2300M N沟道MOSFET产品概述

FSS2300M是富信电子(FOSAN)推出的一款高性能N沟道增强型MOSFET,专为低电压、小功率应用场景设计。该器件采用紧凑的SOT-23封装,兼具低导通损耗、快速开关特性与宽温度适应性,可满足便携式电子、电源管理等领域的多样化需求。以下从核心参数、性能特点、应用场景等维度展开详细概述。

一、核心参数总览

FSS2300M的核心参数覆盖电气特性、热特性与封装规格,具体如下:

1. 基本规格

  • 类型:N沟道增强型MOSFET
  • 单管封装:1个N沟道
  • 封装形式:SOT-23(表面贴装型)
  • 贴装适配:支持自动化回流焊工艺

2. 电气参数

参数名称 数值 测试条件 漏源击穿电压(Vdss) 20V Vgs=0V 连续漏极电流(Id) 5A(标称) 壳温Tcase≤25℃ 导通电阻(RDS(on)) 25mΩ Vgs=2.5V、Id=5A 阈值电压(Vgs(th)) 620mV Id=250μA、Vds=Vgs 栅极电荷量(Qg) 6nC Vds=10V、Id=5A、Vgs=4.5V 输入电容(Ciss) 418pF Vds=15V、Vgs=0V 反向传输电容(Crss) 70pF 同上 输出电容(Coss) 82pF 同上

3. 热参数

  • 最大耗散功率(Pd):1.2W
  • 工作温度范围:-55℃ ~ +150℃(工业级宽温)
  • 热阻(RθJA):约125℃/W(SOT-23封装典型值)

二、关键性能特点

FSS2300M的性能优势集中在低损耗、快速开关、高可靠性三个核心方向:

1. 低导通损耗

25mΩ的导通电阻(Vgs=2.5V时)处于同封装同电压等级器件的领先水平,可有效降低导通时的功率损耗(P=I²R),提升电池供电设备的续航能力。

2. 低阈值电压驱动

仅620mV的阈值电压,无需额外升压电路即可被常见的低电压控制信号(如MCU的1.8V/2.5V输出)直接驱动,简化电路设计,降低BOM成本。

3. 快速开关特性

6nC的栅极电荷量显著降低了开关过程中的能量损耗,配合适中的电容参数(Ciss/Crss),可实现高频开关操作(如100kHz以上的DC-DC转换器),提升系统响应速度。

4. 宽温度适应性

-55℃至+150℃的工作温度范围,覆盖工业级与消费级应用的极端环境需求(如户外便携式设备、车载低功耗模块)。

5. 小封装高密度设计

SOT-23封装体积小巧(典型尺寸1.6mm×2.9mm×1.1mm),可大幅节省PCB布局空间,适配智能手机、智能手环等轻薄化产品的设计趋势。

三、典型应用场景

FSS2300M凭借其低电压、小电流、小封装的特性,广泛应用于以下场景:

1. 便携式电子设备

  • 智能手机/蓝牙耳机:电池充放电控制、LED指示灯负载开关
  • 智能手环/手表:传感器供电控制、振动马达驱动

2. 小型电源管理

  • 低电压DC-DC转换器:3.7V锂电池升压/降压(如5V输出)
  • 负载开关:低电流外设(如蓝牙模块、WiFi模块)的通断控制

3. 电池保护电路

  • 锂电池过充/过放/过流保护:快速切断故障电路,防止电池损坏

4. 微型电机驱动

  • 小型玩具电机、智能门锁马达:低功率驱动控制

四、封装与可靠性保障

1. 封装特性

  • SOT-23封装引脚间距合理(0.95mm),适配自动化贴装设备,生产效率高;
  • 封装材料采用耐高温环氧树脂,可通过无铅回流焊工艺(峰值温度260℃)。

2. 可靠性验证

富信电子对该器件进行了严格的可靠性测试:

  • 高低温循环:-55℃~150℃循环1000次,性能无衰减;
  • ESD静电放电:符合HBM 2kV、MM 200V标准;
  • 寿命测试:150℃下连续工作1000小时,参数变化率<5%。

3. 环保合规

产品符合RoHS 2.0、REACH等全球环保标准,无铅无卤,适配欧盟、北美等市场要求。

五、品牌与应用价值

FOSAN(富信电子)是国内专注于功率半导体器件的专业品牌,拥有10余年器件设计与制造经验,FSS2300M作为其小功率MOSFET系列的核心产品,具有以下应用价值:

  • 成本效益:性能指标优于同价位竞品,可降低系统总成本;
  • 设计灵活性:参数匹配多种低电压场景,无需复杂外围电路;
  • 量产支持:稳定的产能供应(月产能1000万只以上)与完善的技术支持,适合大规模量产。

总结

FSS2300M N沟道MOSFET凭借低导通电阻、快速开关、宽温度范围与小封装等优势,成为便携式电子、电源管理、电池保护等低电压小功率应用的理想选择。其高可靠性与成本效益,可帮助工程师简化电路设计,提升产品竞争力。

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