WMSIC Electronic Components

FOSAN BZT52C8V2

ModelBZT52C8V2
PackageSOD-123
BrandFOSAN
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
FOSAN BZT52C8V2
Type
FOSAN
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
FOSAN
Electronic Component
BZT52C8V2
Electronic Component
1
Package
SOD-123
Electronic Component
Zener Diode
Electronic Component
0.032g
Electronic Component
1
(Zzt)
30Ω
Electronic Component
BM0264886293
Diode
1
Current(Ir)
700nA
Power Dissipation(Pd)
500mW
Electronic Component
7.7V~8.7V
Electronic Component
65℃~+150℃
Electronic Component
Electronic Component

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

BZT52C8V2 — 8.2V 500mW SOD-123 稳压二极管(FOSAN 富信)

一、产品简介

BZT52C8V2 为 FOSAN(富信)推出的一款独立式稳压(齐纳)二极管,标称稳压值 8.2V,封装为 SOD-123,额定耗散功率 500mW。器件适用于空间受限的表贴电路中,作为参考电压源、微小功率稳压与过压钳位等用途。工作结温范围宽 (-65℃ ~ +150℃),适配消费类与部分工业级应用环境。

二、主要电气参数

  • 标称稳压值:8.2V(典型)
  • 稳压范围:7.7V ~ 8.7V(允许公差范围)
  • 反向电流 Ir:700nA(最大,随温度与反向电压变化)
  • 阻抗 Zzt:30Ω(动态阻抗,影响稳压精度)
  • 耗散功率 Pd:500mW(器件在特定散热条件下的最大功耗)
  • 工作结温:-65℃ ~ +150℃
  • 封装:SOD-123,表面贴装,单只器件

这些参数决定了在不同偏置电流与温度下的稳压性能:较大的动态阻抗意味着在电流变化时电压会有明显摆动;微安级反向漏电流在高阻抗电路中需考虑其影响。

三、典型应用场景

  • 小功率基准电压源与电压钳位:用于偏置放大器、模数转换器输入保护等。
  • 低成本稳压与参考:在电流来源可控的情况下作分流型稳压器。
  • 过压/反向保护:在输入瞬态或浪涌情况下吸收多余电压。
  • 消费电子与工业控制板上常见的小型保护与参考场合。

四、设计与使用注意事项

  • 功率与降额:Pd 为 500mW,但实际可耗散功率受 PCB 散热、环境温度影响。设计时应计算结温上升并按厂商热阻数据或工程经验降额使用,避免长期接近 Pd 工作点。
  • 电流选择:稳压时应选择合适的分流电流 Iz,使得在最坏工作电压下器件既能维持稳压又不超过功耗限制。常用公式:R = (Vin - Vz) / Iz。
  • 漏电流与高阻电路:Ir 最大 700nA,在高阻输入或高精度参考电路中会引入误差,应评估影响或选用更低漏电的器件。
  • 动态阻抗影响:Zzt=30Ω 表明随电流变化电压波动显著,若需更稳定参考应配合缓冲器或低噪放大器使用。

五、封装与工艺建议

  • SOD-123 为常用小型表贴封装,建议按无铅回流工艺(SMT)焊接并遵循厂商的温度曲线与最大回流温度。
  • 布局与散热:增大铜箔面积和热沉路径有助于降低结温,提高可用功率。避免将热源元件紧邻零件集中区域。
  • 防静电与存储:按常规二极管类元件处理,避免强 ESD 冲击;存储环境避免高湿高温并使用防潮包装。

六、选型要点与替代

选择 BZT52C8V2 时,应确认:所需稳压电压在 7.7–8.7V 区间可接受;电路允许分流功耗与漏电水平;封装尺寸与 PCB 布局匹配。若需更低噪声、更小动态阻抗或更高功率,应考虑更高功率封装或精密基准源。

总结:BZT52C8V2 在小型化、低成本场景中提供可靠的 8.2V 稳压功能,适合用于偏置、参考与保护。设计时重点关注功耗管理、漏电影响与动态阻抗带来的电压波动,以确保长期稳定可靠。若需更详细的温度系数、测试电流或热阻数据,请参考厂商完整数据手册。

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