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FOSAN US1MF
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- FOSAN US1MF
- Type
- FOSAN
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- FOSAN
- Electronic Component
- US1MF
- Electronic Component
- 1
- Package
- SMAF
- Electronic Component
- Fast Recovery / High-Efficiency Diode
- Electronic Component
- 0.052g
- Electronic Component
- 1
- Electronic Component
- BM0264886313
- Current
- 1A
- Current(Ir)
- 5uA
- (Vf)
- 1.7V@1A
- Electronic Component
- 50℃~+150℃
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Voltage Rating(Vr)
- 1kV
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
US1MF 产品概述
US1MF 是 FOSAN（富信）推出的一款高耐压、快恢复整流二极管，封装为 SMAF，针对需要高电压阻断与高频开关性能的电源与功率电子场景设计。器件在 1A 工作电流下具有稳定的正向压降表现，同时具备较低的反向泄漏和有限的恢复时间，适合中高频开关与高压整流应用。
一、主要规格亮点
- 正向压降 (Vf)：1.7V @ 1A
- 直流反向耐压 (Vr)：1000V (1kV)
- 最大整流电流：1A（连续）
- 反向电流 (Ir)：典型 5 μA（在额定 Vr 下）
- 反向恢复时间 (Trr)：75 ns（快恢复）
- 工作结温范围：-50 ℃ ~ +150 ℃
- 封装：SMAF（表面贴装）
- 品牌：FOSAN（富信）
二、性能特点与优势
- 高耐压设计（1kV），可直接用于高压整流与隔离场合，如高压电源、逆变器和光伏串联保护。
- 快恢复 75ns，适合中高频开关电源与桥式整流，能够减少开关损耗与电磁干扰（EMI）产生。
- 低反向漏电（5 μA），在高阻断电压下依然保持较小的静态损耗，有利于提高系统待机效率与可靠性。
- 宽工作结温范围，适应工业级环境和高温运行需求。
三、典型应用场景
- 开关电源（SMPS）中的高压整流或续流二极管
- 逆变器与电机驱动中的高压保护电路
- 光伏并网或离网系统的高压整流/保护元件
- 高压测试与脉冲电路（需注意冲击与峰值电流限制）
- 各类需要高电压阻断且要求快速恢复的功率电子模块
四、封装与热管理建议
SMAF 表面贴装封装适合自动化贴装与高密度 PCB 布局。为保证长期稳定性：
- 在焊盘与散热铜箔上预留足够面积，必要时使用热沉或多层板过孔散热。
- 在高频开关应用中应注意芯片热循环，建议对结温进行设计余量并按温度-电流特性降额使用。
- 避免长时间工作在极限整流电流或高结温环境，以延长寿命。
五、使用注意事项
- 尽量避免超过额定连续整流电流（1A）与峰值反向电压（1kV），并留意瞬态浪涌电流限制。
- 在并联使用时需考虑 Vf 匹配与电流均流措施。
- 在高电压快速开关场合，建议配合 RC 抑制或吸收元件以减小电压尖峰对器件的冲击。
- 量产前请参考厂商完整的数据手册并进行实际电路实验验证。
如需更详细的电气特性曲线、典型波形、封装尺寸及可靠性数据，请联系 FOSAN（富信）或其授权经销商获取完整数据手册与样品测试支持。
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