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FOSAN BZT52C3V0
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- FOSAN BZT52C3V0
- Type
- FOSAN
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- FOSAN
- Electronic Component
- BZT52C3V0
- Electronic Component
- 1
- Package
- SOD-123
- Electronic Component
- Zener Diode
- Electronic Component
- 0.032g
- Electronic Component
- 1
- (Zzk)
- 600Ω
- (Zzt)
- 325Ω
- Electronic Component
- BM0264886259
- Diode
- 1
- Current(Ir)
- 10uA@1V
- Power Dissipation(Pd)
- 500mW
- Electronic Component
- 2.8V~3.2V
- Electronic Component
- Electronic Component
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
BZT52C3V0 — FOSAN 3.0V 500mW SOD-123 稳压二极管产品概述
一、产品简介
BZT52C3V0 是 FOSAN（富信）推出的一款独立式硅稳压二极管，标称稳压值 3.0V，采用 SOD-123 表面贴装封装。器件设计用于小功率稳压和信号钳位场合，体积小、成本低，适合消费电子、通信模块及各种线路保护与参考电源应用。
二、主要参数
- 品牌：FOSAN（富信）
- 型号：BZT52C3V0
- 稳压值（标称）：3.0V
- 稳压值范围：2.8V ～ 3.2V
- 反向电流 Ir：10 μA @ 1V
- 耗散功率 Pd：500 mW（器件整体最大耗散）
- 动态阻抗 Zzt：325 Ω
- 阻抗 Zzk：600 Ω
- 封装：SOD-123（独立式，单只二极管）
三、电性能要点解释
- 稳压精度：标称 3.0V，规格范围 2.8–3.2V，适用于对稳压精度要求不苛刻的低压参考或钳位场景。
- 反向漏电：在 1V 反向偏压下 Ir=10 μA，表明在低偏压下漏电较小，但在高温或更高偏压下漏电会增大，应据实际工作点评估。
- 动态阻抗：Zzt=325 Ω、Zzk=600 Ω，动态阻抗较高，说明在改变电流时稳压点会有一定波动，适合小电流、低功耗稳压或作电压钳位，而非精密参考源。
四、封装与热管理
SOD-123 为小型贴片封装，便于自动贴装与回流焊接。器件额定耗散功率为 500 mW，但实际可用功率受 PCB 散热条件和环境温度影响。在设计时应：
- 限制稳压电流，确保在最大结温下不超过 Pd；
- 在高功耗应用中采用较大铜箔面积或散热层以降低结温；
- 遵循 PCB 布局与焊接工艺规范，避免超出回流温度曲线。
五、典型应用
- 小电流稳压参考（如传感器偏置、基准电源）
- 输入浪涌或尖峰电压钳位与保护
- 信号线路的电压钳位与耦合电路
- 低成本、低功耗的分流稳压方案
六、选型与使用建议
- 若需较高稳压精度或低动态阻抗，应考虑功率更大或精密参考型器件；
- 在高温环境或持续较大电流工作时，按 Pd 做降额设计并验证结温；
- 贴片时按 SOD-123 标准焊盘布局设计，严格控制回流焊温度和时间，避免机械应力；
- 量产前建议在目标电路上做 I-V 曲线与热升测试，确认稳压点和长期可靠性。
BZT52C3V0 以其小体积、简易驱动和经济性，适合对稳压精度要求适中且功率不高的应用场景。选择与布局时应重点考虑热管理与工作电流限制，以保证长期稳定工作。
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