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FOSAN 2N7002K
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- FOSAN 2N7002K
- Type
- FOSAN
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- FOSAN
- Electronic Component
- 2N7002K
- Electronic Component
- 1
- Package
- SOT-23
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 0.033g
- Electronic Component
- 1
- Electronic Component
- BM0264881608
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 350mW
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Voltage(Vdss)
- 60V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
2N7002K 产品概述
一、概述与核心参数
2N7002K 是一款小信号 N 沟道增强型场效应管（MOSFET），适用于低功耗开关与逻辑级驱动场合。FOSAN（富信）品牌，封装为 SOT-23，器件在宽温范围内工作（-55℃～+150℃）。主要电气参数如下：漏源耐压 Vdss = 60V，连续漏极电流 Id ≈ 340mA，典型导通电阻 RDS(on) = 1.3Ω（Vgs=10V），耗散功率 Pd = 350mW，栅阈电压 Vgs(th) ≈ 1.4V，栅极总电荷 Qg ≈ 1.6nC。输入电容 Ciss = 21pF，输出 Coss = 3pF，反向传输电容 Crss = 2pF。
二、性能亮点
- 低电容与小栅电荷：Ciss 和 Qg 值较小，利于快速开关、降低驱动能耗，适合频繁切换场合。
- 中等电压能力：60V 的 Vdss 使其能在较高电压边界下用作开关或保护元件。
- SOT-23 小封装：占板面积小，适合空间受限的移动和便携设备。
- 宽温度范围与稳定性：适用于工业和商用环境的温度要求。
三、典型应用
- 低电流负载开关：用于驱动 LED、继电器线圈的控制或电源路径的低功耗断开。
- 电平转换与逻辑接口：作为开漏式电平移位器或信号开关，配合上拉电阻实现双向传输。
- 快速开关与脉宽调制：在频率不太高的开关电源或驱动电路中可作为开关元件。
- 保护电路与电流限制应用：配合限流电阻用于短路保护与反向阻断。
四、设计与布局建议
- 栅极保护：器件对静电敏感，PCB 设计应考虑栅极到地的 RC 抑制，必要时并联 TVS 或钳位二极管。
- 驱动电压：RDS(on) 数据在 Vgs=10V 下给出，若在 3.3V 或 5V 逻辑电平下使用，应评估实际导通电阻与功耗。
- 封装热管理：SOT-23 的功耗限制明显，注意通过 PCB 铜箔扩展散热区或多层板散热设计，以避免过热。
- 布线建议：尽量缩短漏极与源极的回流路径，减小寄生电感和压降。
五、热与可靠性
器件 Pd=350mW（SOT-23）在无额外散热的情况下一般适合小电流连续工作。开关应用中需考虑瞬态损耗与结温上升，长期可靠性依赖于合理的结温控制和避免长时间高功率耗散。
六、选型建议与替代件
当需求为高频高速驱动或更低 RDS(on) 时，可考虑更低阻值或更大封装的 MOSFET。若工作电流接近或超过数百毫安，应验证在目标 Vgs 下的 RDS(on) 与温升，必要时选用功率能力更强的封装替代。总体上，2N7002K 在中等电压、低至中等电流的开关与信号控制场景中，是性价比较高的通用选择。
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