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FOSAN BSS84
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- FOSAN BSS84
- Type
- FOSAN
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- FOSAN
- Electronic Component
- BSS84
- Electronic Component
- 1
- Package
- SOT-23
- Electronic Component
- 1 P
- Type
- P
- Electronic Component
- MOSFET
- Electronic Component
- 0.033g
- Electronic Component
- 1
- Electronic Component
- BM0228561507
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 225mW
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Voltage(Vdss)
- 60V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
BSS84 P沟道 MOSFET（FOSAN）产品概述
一、产品简介
BSS84 为 FOSAN（富信）推出的一款小信号 P沟道场效应晶体管，采用 SOT-23 小体积封装，适合空间受限的便携及消费类电子设备。器件设计以低电容、低栅极电荷为目标，便于实现快速开关与低功耗栅极驱动，常用于高端与低端电源切换、倒灌保护与小电流负载控制等场合。
二、主要技术参数
- 类型：P沟道 MOSFET（单颗，数量：1）
- 漏源电压（Vdss）：标称约 -50V（部分变体或资料中有 60V 标注，请以实际版本数据为准）
- 连续漏极电流（Id）：约 -130 mA ~ -170 mA（视封装散热与工作温度而定）
- 导通电阻 RDS(on)：3.3 Ω @ Vgs = -10V
- 阈值电压 Vgs(th)：约 1.4 V
- 总栅极电荷 Qg：1.7 nC（典型）
- 输入电容 Ciss：43 pF；输出电容 Coss：3 pF；反向传输电容 Crss：1.8 pF
- 功耗 Pd：约 200 ~ 225 mW（SOT-23，Ta = 25°C）
- 工作温度范围：-55 ℃ ～ +150 ℃
- 封装：SOT-23
三、特点与优势
- 低门极电荷与较小电容（Qg 1.7nC、Ciss 43pF），栅极驱动能耗低，适合电池供电系统和快速切换场景。
- SOT-23 小封装利于高密度 PCB 布局；-55℃~+150℃ 的宽温区间满足工业级环境使用。
- 适合在有限电流与低功耗场合实现可靠的高端开关与反向保护，RDS(on) 在 -10V 驱动下提供稳定导通特性。
四、典型应用场景
- 电池供电设备的高端开关和电源路径控制
- 便携式设备的倒灌/反向保护电路
- 低功耗电路中的负载开关与电平切换
- 模拟开关、信号隔离与小电流驱动场合
五、使用与布局建议
- 由于功耗受限，建议在设计中注意封装散热（合理走铜与热过孔），避免长时间高电流工作。
- 栅源电压范围与最大 Vgs 请以厂商完整数据手册为准，避免超限驱动导致器件损坏。
- 对于快速开关应用，可结合较小的门极电阻以提升上升/下降时间，但需权衡振铃与 EMI 问题。
六、封装与可靠性
SOT-23 封装便于自动贴片与回流焊工艺，适配常规 SMT 产线。器件在工业温度范围内保持稳定性能，但大电流或高频开关时需注意功耗和结温上升，必要时采用并联或更大散热方案。
七、订购与选型注意
BSS84 具有多版本与厂商差异，实际电气特性（如 Vdss、Id、Pd）可能随规格单变化。建议在最终选型与量产前，索取并核对 FOSAN 官方数据手册与样片测试报告，以确保参数满足目标应用。
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