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GOODWORK SI2302S
Configuration
1 options
Configuration
Date code within 2 years
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- GOODWORK SI2302S
- Type
- GOODWORK
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- GOODWORK
- Electronic Component
- SI2302S
- Electronic Component
- 1
- Package
- SOT-23
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 0.031g
- Electronic Component
- 1
- Electronic Component
- BM0229305570
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 1.2W
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Voltage(Vdss)
- 20V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
SI2302S 产品概述
一、简介
SI2302S（品牌：GOODWORK 固得沃克）是一款小型封装、高性价比的N沟道增强型MOSFET，封装为SOT-23，额定漏源电压20V，适用于各类低压开关与电源管理场合。器件工作温度范围宽（-55℃~+150℃），单片数量：1个N沟道。
二、主要电气参数
- 漏源电压 Vdss：20V
- 连续漏极电流 Id：2.3A（条件受封装热限制）
- 导通电阻 RDS(on)：45mΩ @ Vgs=4.5V；65mΩ @ Vgs=2.5V
- 阈值电压 Vgs(th)：1V @ Id=250µA
- 输入电容 Ciss：200pF；输出电容 Coss：35pF；反向传输电容 Crss：28pF
- 栅极电荷 Qg：3nC @ Vgs=4.5V
- 最大耗散功率 Pd：1.2W
三、特点与优势
- 低导通电阻，在4.5V驱动下RDS(on)仅45mΩ，适合MCU直接驱动与电源负载开关。
- 低栅极电荷（Qg=3nC），开关速度快，开关损耗小，适用于高频切换场合。
- SOT-23小型封装，适合空间受限的便携或高密度电路板布局。
- 宽工作温度范围，可靠性高，适用于工业级应用。
四、典型应用
- 便携设备电源路径开关、负载开关与电源隔离
- DC-DC降压转换器中的低侧开关或同步整流（需依据功率与热限）
- 电池供电系统、背光驱动、信号切换与保护电路
五、设计与布局注意事项
- 封装热性能受限，最大Pd=1.2W，实际导通损耗（I^2·RDS(on)）与切换损耗都需在热预算内，建议在PCB上增大铜箔面积以降低结-环境热阻。
- 由于Crss=28pF，快速开关时可能出现寄生振荡，建议在栅极串联小电阻（10Ω~100Ω）以及添加必要的RC阻尼或吸收网络以抑制振铃。
- 在2.5V直驱场景下RDS(on)为65mΩ，适合低压微控制器直接驱动，但若要求最低导通损耗，推荐使用4.5V门极驱动。
- 注意器件的反向本体二极管特性，在开关瞬态时做好续流与回路设计。
六、封装与可靠性
- 封装：SOT-23（单管）。适合表面贴装自动化生产。
- 温度范围：-55℃ ~ +150℃，适用于苛刻环境与工业级产品。
- 处理建议：常规防静电防潮措施，按厂商包装与回流焊工艺评价。
总结：SI2302S 是一款面向低压开关与电源管理的通用N沟道MOSFET，兼顾低导通电阻与快速开关特性，SOT-23封装使其在空间受限的设计中具有良好适应性。针对具体功率与热管理需求，请在实际应用中进行热仿真与版图优化。
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